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Energy Band States of an Oxygen-doped GeSbTe Phase-change Memory Cell; Mechanism of Low-voltage Operation

Published online by Cambridge University Press:  01 February 2011

Yoshihisa Fujisaki ,
Nozomu Matsuzaki ,
Kenzo Kurotsuchi ,
T Morikawa ,
M Kinoshita ,
N Kitai ,
Satoru Hanzawa ,
H Moriya ,
Norikatsu Takaura  and
M Terao
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Yoshihisa Fujisaki
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan, +81-42-327-7851, +81-42-327-7773
Nozomu Matsuzaki
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan
Kenzo Kurotsuchi
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan
T Morikawa
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan
M Kinoshita
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan
N Kitai
Affiliation:
[email protected], Hitachi USIL Systems, Tokyo, 185-8601, Japan
Satoru Hanzawa
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan
H Moriya
Affiliation:
[email protected], Mechanical Engineering Research Lab., Ibaraki, 312-0034, Japan
Norikatsu Takaura
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan
M Terao
Affiliation:
[email protected], Hitachi Ltd., Central Research Laboratory, 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan
M Matsuoka
Affiliation:
[email protected], Renesas Technology Corp., Hyogo, 664-0005, Japan
Tsuyoshi Koga
Affiliation:
[email protected], Renesas Technology Corp., Hyogo, 664-0005, Japan
M Moniwa
Affiliation:
[email protected], Renesas Technology Corp., Hyogo, 664-0005, Japan
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Abstract

Phase-change memory is promising because it has a simple structure and has scalability that originates from its unique operating mechanism. However, the programming current should be reduced in accordance with the scaling of cell size [1,2]. We previously reported PCM (Phase Change Memory) cells that operate under 1.5-V/100-μA writing pulses [3, 4]. This PCM had a cell structure composed of 180-nm-W (tungsten) bottom contact to an O-GST (Oxygen-doped GeSbTe) film. Its low-power characteristic is suitable for 0.13-μm generation embedded applications. In the present study, we introduced a new W/O-GST/TaO/W cell structure and found further decrease of programming current the improved stability in the fabrication process. We analyzed the mechanism by which oxygen in GST and the additional TaO layer reduce the power consumption during SET/RESET operations.

Keywords

defectsphase transformationmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I11-01
Copyright
Copyright © Materials Research Society 2007

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References

[1] Cho, S. L. et al. , Symp. On VLSI Technology, pp. 96–97, 2005.Google Scholar
[2] Lai, S., IEDM Tech. Dig., pp. 10.1.1– 10.1.4, 2003.Google Scholar
[3] Matsuzaki, N. et al. , IEDM Tech. Dig., pp. 31.1.1–31.1.4, 2005.Google Scholar
[4] Matsui, Y. et al. , IEDM Tech. Dig., pp. 30.1.1–30.1.4, 2006.Google Scholar