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Coupled Stress Evolution in Polygranular Clusters and Bamboo Segments in Near-Bamboo Interconnects

Published online by Cambridge University Press:  15 February 2011

B. D. Knowlton ,
J. J. Clement ,
R. I. Frank  and
C. V. Thompson
B. D. Knowlton
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. J. Clement
Affiliation:
Digital Equipment Corp., 77 Reed Road, Hudson, MA 01749
R. I. Frank
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
C. V. Thompson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Electromigration-induced failure of near-bamboo interconnects depends strongly on the number and lengths of both polygranular clusters and bamboo segments in a line. We have used numerical techniques to calculate the stress profile as a function of position and time for near-bamboo lines with a variety of microstructures. Our results show that coupling of stress profiles between nearby clusters can affect the time to reach a pre-defined critical, or failure, stress. The degree of coupling depends both on the spacing between clusters and the ratio of the diffusivities between polygranular and single crystal regions. Electromigration failure is therefore sensitive to the distribution and lengths of bamboo segments, and the likelihood of long polygranular clusters coinciding with adjacent short bamboo segments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 189
Copyright
Copyright © Materials Research Society 1995

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References

1 Joo, Y.-C. and Thompson, C. V., MRS Symp. Proc. 338, p. 319 (1994).Google Scholar
2 Joo, Y.-C. and Thompson, C. V., J. Appl. Phys. 76, p. 7339 (1994).Google Scholar
3 Korhonen, M. A., Børgesen, P., Tu, K. N., and Li, C.-Y., J. Appl. Phys. 73, 3790 (1993).Google Scholar
4 Clement, J. J. and Thompson, C. V., Modeling Electromigration-Induced Stress Evolution in Confined Metal Lines, to appear in J. of Appl. Phys. (1995).Google Scholar
5 Clement, J. J., Thompson, C. V., and Enver, A., MRS Symp. Proc. 338, p. 353 (1994).Google Scholar
6 Pichler, P., Jiingling, W., Selberherr, S., Guerrero, E., Pötzl, H., IEEE Trans. Computer Aided Design CAD-4, 384 (1985).Google Scholar
7 Frost, H. J., Thompson, C. V., Walton, D. T., Acta Met. et Mat. 38, p. 1455 (1990).Google Scholar
8 Walton, D. T., Frost, H. J., and Thompson, C. V., Appl. Phys. Letters 16, 40–42 (1992).Google Scholar
9 Walton, D. T., Frost, H. J., and Thompson, C. V., Mat. Res. Soc. Proceedings Series 225, 219–225 (1991).Google Scholar
10 Walton, D. T., Computer Simulation of Grain Growth in Thin Film Interconnect Strips, M.S. Thesis, Dartmouth College (1991).Google Scholar
11 Frost, H. J., Thompson, C. V., Howe, C. L., and Wang, J., Scripta Metall. 22, 65 (1987).Google Scholar
12 Thompson, C. V. and Joo, Y.-C., this proceedings.Google Scholar