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Raman investigation of the air stability of 2H polytype HfSe2 thin films

Published online by Cambridge University Press:  06 September 2018

Antonio Cruz ,
Zafer Mutlu ,
Mihrimah Ozkan  and
Cengiz S. Ozkan Open the ORCID record for Cengiz S. Ozkan [Opens in a new window]
Antonio Cruz
Affiliation:
Materials Science and Engineering Program, University of California, Riverside, CA 92507, USA
Zafer Mutlu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
Mihrimah Ozkan
Affiliation:
Department of Electrical and Computer Engineering, University of California, Riverside, CA 92507, USA
Cengiz S. Ozkan*
Affiliation:
Materials Science and Engineering Program, University of California, Riverside, CA 92507, USA Department of Mechanical Engineering, University of California, Riverside, CA 92507, USA
*
Address all correspondence to Cengiz S. Ozkan at [email protected]
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Abstract

Hafnium diselenide (HfSe2) has a high theoretical carrier mobility but is among the most reactive transition-metal dichalcogenides (TMDs). Herein, we have investigated the air stability of 2H polytype HfSe2 single-crystal thin films by spectroscopic and microscopic techniques. Raman spectroscopy measurements in conjunction with atomic force microscopy reveal the formation of selenium-rich blisters on the surface of the crystals upon air exposure. Transmission electron microscopy analysis indicates that 2H-HfSe2 undergoes a spontaneous phase change to 1T-HfSe2. These results offer Raman spectroscopy as a fast, convenient, non-destructive technique to reliably monitor the surface degradation of TMDs and present an opportunity for further study of phase changes in this material.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 1191 - 1196
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Copyright
Copyright © Materials Research Society 2018 

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Footnotes

*

Work performed during postdoctoral studies at the University of California, Riverside.

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