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Observation and characterization of memristive silver filaments in amorphous zinc-tin-oxide

Published online by Cambridge University Press:  13 August 2018

Hiep N. Tran Open the ORCID record for Hiep N. Tran [Opens in a new window] ,
Thomas J. Raeber ,
Zijun C. Zhao ,
David R. McKenzie ,
Anthony S. Holland ,
Dougal G. McCulloch ,
Billy J. Murdoch  and
Jim G. Partridge
Hiep N. Tran*
Affiliation:
School of Engineering, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Thomas J. Raeber
Affiliation:
School of Science, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Zijun C. Zhao
Affiliation:
School of Physics, The University of Sydney, NSW 2006, Sydney, Australia
David R. McKenzie
Affiliation:
School of Physics, The University of Sydney, NSW 2006, Sydney, Australia
Anthony S. Holland
Affiliation:
School of Engineering, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Dougal G. McCulloch
Affiliation:
School of Science, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Billy J. Murdoch
Affiliation:
School of Science, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Jim G. Partridge
Affiliation:
School of Science, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
*
Address all correspondence to Hiep N. Tran at [email protected]
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Abstract

Lateral memristors consisting of planar Ag electrodes (with sub-micrometer separation) supported on thin films of amorphous zinc-tin-oxide have been characterized. After an initial filament-forming process, each device exhibited volatile, resistive switching. In the low resistance state, the transport mechanism and conductance depended on prior activity and on the imposed current limit, mimicking biologic synaptic plasticity. Microscopic observations performed on each device revealed nanoscale filaments between the electrodes. These filaments were subject to Rayleigh instability and exhibited relaxation times determined by their effective radii. The relaxation times and on:off resistance ratios suggest suitability for threshold switching selector devices.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 1104 - 1110
Copyright
Copyright © Materials Research Society 2018 

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