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Bismuth doping on CuGaS2 thin films: structural and optical properties

Published online by Cambridge University Press:  16 April 2018

Marcos A. S. Andrade Jr. Open the ORCID record for Marcos A. S. Andrade Jr. [Opens in a new window]  and
Lucia H. Mascaro
Marcos A. S. Andrade Jr.*
Affiliation:
Department of Chemistry, Federal University of São Carlos, Rod. Washington Luiz, Km 235, CEP 13565-905, São Carlos-SP, Brazil
Lucia H. Mascaro
Affiliation:
Department of Chemistry, Federal University of São Carlos, Rod. Washington Luiz, Km 235, CEP 13565-905, São Carlos-SP, Brazil
*
Address all correspondence to Marcos A. S. Andrade at [email protected]
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Abstract

In this work, we present a solvothermal method to prepare bismuth (Bi)-doped CuGaS2 chalcopyrite nanocrystals ink and apply it to an all-solution-processed approach for the preparation of films with a thickness of approximately 730 nm and with enhanced optical properties and lower band gap energy than the undoped semiconductor films. The low-cost deposition method is comprised by spray deposition of the chalcogenide nanocrystals ink onto the molybdenum substrates, producing microcrystalline films with grains larger than 400 nm originated from coalescence of Bi-doped nanocrystals. Bi-doped CuGaS2 microcrystalline films are a good candidate to be applied as an absorber layer in thin-film solar cells.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 2 , June 2018 , pp. 504 - 508
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Copyright
Copyright © Materials Research Society 2018 

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