This study introduces a passive autofocus method based on image analysis calculating the Bayes spectral entropy (BSE). The method is applied to optical microscopy and together with the specific construction of the opto-mechanical unit, it allows the analysis of large samples with complicated surfaces without subsampling. This paper will provide a short overview of the relevant theory of calculating the normalized discrete cosine transform when analyzing obtained images, in order to find the BSE measure. Furthermore, it will be shown that the BSE measure is a strong indicator, helping to determine the focal position of the optical microscope. To demonstrate the strength and robustness of the microscope system, tests have been performed using a 1951 USAF test pattern resolution chart determining the in focus position of the microscope. Finally, this method and the optical microscope system is applied to analyze an optical grating (100 lines/mm) demonstrating the detection of the focal position. The paper concludes with an outlook of potential applications of the presented system within quality control and surface analysis.

To eliminate the effect of subjective factors during manually determining the pearlite spheroidization grade of steel by analysis of optical metallography images, a novel method combining image mining and artificial neural networks (ANN) is proposed. The four co-occurrence matrices of angular second moment, contrast, correlation, and entropy are adopted to objectively characterize the images. ANN is employed to establish a mathematical model between the four co-occurrence matrices and the corresponding spheroidization grade. Three materials used in coal-fired power plants (ASTM A315-B steel, ASTM A335-P12 steel, and ASTM A355-P11 steel) were selected as the samples to test the validity of our proposed method. The results indicate that the accuracies of the calculated spheroidization grades reach 99.05, 95.46, and 93.63%, respectively. Hence, our newly proposed method is adequate for automatically detecting the pearlite spheroidization grade of steel using optical metallography.

A new approach is presented to introduce the fine structure of core-loss excitations into the electron energy-loss spectra of ionization edges by Monte Carlo simulations based on an optical oscillator model. The optical oscillator strength is refined using the calculated electron energy-loss near-edge structure by density functional theory calculations. This approach can predict the effects of multiple scattering and thickness on the fine structure of ionization edges. In addition, effects of the fitting range for background removal and the integration range under the ionization edge on signal-to-noise ratio are investigated.

Modern analytical electron microscopes equipped with silicon drift detectors now allow for a wide range of geometrical configurations capable of performing quantitative X-ray spectrometry. Recent work has improved the collection solid angles of these detectors, however, the impact of increasing the solid angle on detection sensitivity as measured by the peak/background ratio has not been addressed. This work compares theoretical and experimental peak/background ratios for incident electron energies in the range of 20–200 keV, with X-ray detectors in both conventional orientations (on the electron entrance surface) as well as new geometries (the electron exit surface). The implications of these parameters on detectability limits for the next generations of “Lab-in-the-Gap” analytical microscope are also considered. It was found that theoretical calculations of the angular distribution of bremsstrahlung and their effects on the peak/background ratio match well with experimental measurements, and indicate that new geometries which can result in large solid angles provided an added benefit in addition to increased characteristic signal, namely increased sensitivity for the analyst.

We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80–200 keV electron beams.

We present a simple, fast method for thickness characterization of suspended graphene/graphite flakes that is based on transmission electron microscopy (TEM). We derive an analytical expression for the intensity of the transmitted electron beam I0(t), as a function of the specimen thickness t (t<<λ; where λ is the absorption constant for graphite). We show that in thin graphite crystals the transmitted intensity is a linear function of t. Furthermore, high-resolution (HR) TEM simulations are performed to obtain λ for a 001 zone axis orientation, in a two-beam case and in a low symmetry orientation. Subsequently, HR (used to determine t) and bright-field (to measure I0(0) and I0(t)) images were acquired to experimentally determine λ. The experimental value measured in low symmetry orientation matches the calculated value (i.e., λ=225±9 nm). The simulations also show that the linear approximation is valid up to a sample thickness of 3–4 nm regardless of the orientation and up to several ten nanometers for a low symmetry orientation. When compared with standard techniques for thickness determination of graphene/graphite, the method we propose has the advantage of being simple and fast, requiring only the acquisition of bright-field images.