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Investigating Defect Contrast in GeXSh1-x/Si Epitaxial Structures Using Electron Channeling Contrast Imaging

Published online by Cambridge University Press:  04 August 2017

Joseph Tessmer ,
Marc DeGraef  and
Yoosuf N. Picard
Joseph Tessmer
Affiliation:
Dept. of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh PA, USA
Marc DeGraef
Affiliation:
Dept. of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh PA, USA
Yoosuf N. Picard
Affiliation:
Dept. of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh PA, USA

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 574 - 575
Copyright
© Microscopy Society of America 2017 

References

[1] Picard, Yoosuf N. & Mark, E. Twigg Journal of Applied Physics 104.12 2008). p. 124906.CrossRefGoogle Scholar
[2] Carnevale, Santino D., et al, Applied Physics Letters 104.23 2014). p. 232111.Google Scholar
[3] Kvam, E. P., et al, Journal of Materials Research 5.09 1990). p. 1900.Google Scholar
[4] Research supported by an ONR grant, # N00014-16-1-2821. The authors acknowledge use of the Materials Characterization Facility at Carnegie Mellon University supported by grant MCF-677785.Google Scholar