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Laser-induced surface perturbations in silicon

Published online by Cambridge University Press:  31 January 2011

A. J. Pedraza
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996–2200
S. Jesse
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996–2200
Y. F. Guan
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996–2200
J. D. Fowlkes
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996–2200
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Abstract

In this paper it is shown that the initial stages in the laser-induced roughening in silicon is independent of the atmosphere used, whether it is Ar, vacuum, or SF6. It is also shown that the morphology that results after a few hundred laser pulses strongly depends on the crystallographic orientation of the surface. The morphological features that appear in this first stage have been related to the nature of the solidification process that follows laser melting. A second stage in the roughening process with a dramatic change in morphology takes place when a surface with deep depressions and hills is further irradiated in SF6. Very deep etching occurs in the depressions promoting the formation of microholes that with further irradiation lead to cone formation. It is further shown that the distance between microholes is equal to the distance between the depressions that formed as the initial perturbations developed. Then the wavelength of the initial perturbation and by extension the distance between microholes has been estimated.

Type
Articles
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Pedraza, A.J., in Lasers in Materials, edited by Agarwala, R.P., Mater. Sci. Forum 301, 69 (1999).CrossRefGoogle Scholar
2.Her, T-H., Finlay, R.J., Wu, C., Deliwala, S., and Mazur, E., Appl. Phys. Lett. 73, 1673 (1998).CrossRefGoogle Scholar
3.Sanchez, F., Morenza, J.L., and Trtik, V., Appl. Phys. Lett. 75, 3302 (1999).CrossRefGoogle Scholar
4.Sanchez, F., Morenza, J.L., Aguiar, R., Delgado, J.C., and Varela, M., Appl. Phys. Lett. 69, 62 (1996).CrossRefGoogle Scholar
5.Fowlkes, J.D., Pedraza, A.J., and Lowndes, D.H., Appl. Phys. Lett. 77, 1629 (2000).CrossRefGoogle Scholar
6.Pedraza, A.J., Fowlkes, J.D., and Lowndes, D.H., Appl. Phys. Lett. 77, 3018 (2000)CrossRefGoogle Scholar
7.Voronov, V.V., Dolgaev, S.I., Lavrishchev, S.V., Lyalin, A.A., Simakin, A.V., and Shafeev, G.A., Phys. Vib. 7, 131 (1999).Google Scholar
8.Birnbaum, M., J. Appl. Phys. 36, 3688 (1965).CrossRefGoogle Scholar
9.Maracus, G.N., Harris, G.L., Lo, C.A., and McFarlane, R.A., Appl. Phys. Lett. 33, 453 (1978).CrossRefGoogle Scholar
10.Tsukada, N., Sugata, S., and Mita, Y., Appl. Phys. Lett. 42, 424 (1983).CrossRefGoogle Scholar
11.Sipe, J.E., Young, J.F., Preston, J.S., and van, H.M.Driel, Phys. Rev. B 27, 1141 (1983).CrossRefGoogle Scholar
12.Young, J.F., Preston, J.S., van Driel, H.M., and Sipe, J.S., Phys. Rev. B 27, 1155 (1983).CrossRefGoogle Scholar
13.Ursu, I., Mihailescu, I.N., Popa, A.I., Prokhorov, A.M., Ageev, V.P., Gorbunov, A.A., and Konov, V.I., J. Appl. Phys. 58, 3909 (1985).CrossRefGoogle Scholar
14.Jesse, S., Pedraza, A.J., Fowlkes, J.D., Budai, J.D., and Lowndes, D.H., J. Mater. Res. (submitted for publication).Google Scholar
15.Bloem, J. and Gilling, L.J., Curr. Top. Mater. Sci. 1, 277 (1978).Google Scholar
16.Bennett, J.M. and Mattsson, L., in Introduction to Surface Roughness and Scattering (Optical Society of America, Washington, D.C., 1989), p. 19.Google Scholar
17.Jesse, S., Pedraza, A.J., Fowlkes, J.D., Budai, J., and Lowndes, D.H., to be published in the MRS Symposium on Microcrystalline and Nanocrystalline Semiconductor Materials and Structures (2001).Google Scholar
18.Bauerle, B., Laser Processing and Chemistry, 2nd ed. (Springer, Berlin, Germany, 1996), p. 253.CrossRefGoogle Scholar
19.Williams, K.R., in Properties of Crystalline Silicon, edited by Hull, R. (Datareviews Series No. 20, INSPEC, London, United Kingdom, 1999), p. 853.Google Scholar
20.Wood, R.F. and Jellison, G.E. Jr, in Semiconductors and Semimetals, edited by Wood, R.F., White, C.W., and Young, R.T. (Academic Press, Orlando, FL, 1984), Vol. 23, p. 165.Google Scholar
21.De Unamuno, S. and Fogarassy, E., Appl. Surf. Sci. 36, 1 (1989).CrossRefGoogle Scholar
22.Heinrich, F. and Bostanjoglo, O., Appl. Surf. Sci. 54, 244 (1992).CrossRefGoogle Scholar
23.Anisimov, S.I., Khokhlov, V.A., Instabilities in Laser-Matter Interaction (CRC Press, Inc., Boca Raton, FL, 1995).Google Scholar
24.Brailovsky, A.B., Gaponov, S.V., and Luchin, V.I., Appl. Phys. A 61, 81 (1995).CrossRefGoogle Scholar
25.Levchenko, E.B. and Chernyakov, L., J. Appl. Mech. Tech. Phys. 6, 870 (1983).CrossRefGoogle Scholar
26.Feenstra, R.M. and Stroscio, J.A., Phys. Rev. Lett. 59, 2173 (1987).CrossRefGoogle Scholar
27.Crapper, G.D., in Introduction to water waves (Ellis Horwood Ltd. John Wiley & Sons, New York, 1984).Google Scholar