A recently developed material based on carbon nanotubes is used here for the realization of single- and double-layered frequency-selective surfaces (FSSs) with relevant absorbing properties. The peculiar characteristics of carbon nanotubes are exploited to devise high-loss resonant ring structures periodically arranged to build the FSS. By introducing two layers of rings, an absorber with stable characteristics over a wide frequency band and over a wide range for the incident wave angle is achieved.

The present paper presents the design and development of a dual-channel microwave rotary joint using coaxial waveguide as primary waveguide and rectangular waveguide as the secondary waveguide. Design is presented at 5.85–7.02 GHz with 20% bandwidth and at 14–14.5 GHz bands with 3.6% bandwidth using dual channel mode transducers exciting transverse electromagnetic (TEM) mode in the coaxial waveguide. Rectangular to coaxial waveguide transitions employing multi-stepped doorknob transitions are used to excite the TEM mode from the rectangular waveguide. The measured results for electrical parameters such as return loss, insertion loss of the dual-channel rotary joint are presented with 360° rotation of the rotary part with respect to the stator part.

This paper presents two compact slot array antennas for the 79 GHz automotive band integrated into a 28 µm thick benzocyclobutene (BCB) substrate attached to a 325 µm thick 5–20 Ω cm bulk resistivity silicon wafer. The two antennas are a transmit (TX) 1 × 8 slot array antenna with a size of 1 × 23 mm and a receive (RX) 8 × 8 slot array antenna with a size of 15 × 23 mm. Promising performance has been measured with the TX and RX subarray antennas (gain >4 dBi) with good matching to 50 Ω (RL > 10 dB) in the frequency range 70–90 GHz. By using a metal cavity, mounted on the back of the antenna, potential parallel plate or cavity modes could be reduced and the gain could also be increased by 2 dB. The measured and the simulated results are consistent.

This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.

This paper presents an overview of the principles suitable for wireless power supply of devices with a small power input in picocells. This means predominantly different types of small electric devices in the space of rooms. Basic principles, namely electromagnetic induction and electromagnetic wave, are explained using examples of developed systems. Different types of wireless power systems are compared with respect to efficiency, frequency, power, and transmission distance.

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

In this paper, we present a microwave absorber based on carbon nanotubes (CNT) dispersed inside a BenzoCycloButen® (BCB) polymer. The high aspect ratio and remarkable conductive characteristics of CNT give rise to good absorbing properties for electromagnetic protecting in microelectronic devices with very low concentration. In this article, nanocomposites are prepared using a solution-mixing method and are then evaluated and modeled by means of coplanar test structures. First, CNT concentrations are quantified by image processing. The nanocomposites implemented with coplanar test waveguides are then characterized using a vector network analyzer from 40 MHz to 20 GHz. An algorithm is developed to calculate the propagation constant “γ”, attenuation constant “α”, and relative effective complex permittivity (ɛreff = ɛreff′ − jɛreff″) for each CNT concentration. The extracted effective parameters are verified using the electromagnetic FEM-based Ansoft's® high frequency structure simulator (HFSS). Power absorption (PA) of 7 dB at 15 GHz is obtained with only 0.37 weight percent of CNT concentration in the polymer matrix. The resulting engineerable and controllable composite provides consequently a novel degree of freedom to design and optimize innovative microwave components.

A detailed nonlinear analysis and design of a distributed voltage controlled oscillator (DVCO) is presented in this work. The analysis and design of the DVCO is performed using harmonic balance-based simulation techniques and envelope transient simulation. These techniques are used to make a complete nonlinear study of the behavior of the DVCO. Using the proposed nonlinear tools, a DVCO operating in the frequency tuning range between 1 and 2 GHz has been implemented in order to support the simulation results. The average output power and consumption along the frequency band for the designed DVCO are 5.2 dBm and 60.4 mW, respectively.

A highly integrated silicon platform (Hi-Mission) for high frequency applications is introduced. This platform utilizes heterogeneous Multi-Chip Module-Deposited (MCM-D) technology with integrated passive devices together with silicon and GaAs Monolithic Microwave Integrated Circuit (MMIC) technology developed for the automotive Ultra Wide Band (UWB) radar (short-range radar) frequency band from 77 to 81 GHz. Developments are described in the area of MCM-D process development, MMIC, integrated phased array antenna, module design, and assembly process development. The demonstrator is composed of two test vehicles designed for conducted and radiated measurements, respectively. Test results are presented at the component and module level.

This paper gives a summarized overview on the progress and achievements on AlGaN/GaN high electron mobility transistors (HEMT)-based power amplifiers (PAs) for mobile radio applications which have been achieved within two national funded German projects during a period of six years. Starting with a first 34 dBm (2.5 W, peak) amplifier in 2003 the impressive progress toward highly efficient S-band mobile radio PAs with up to >50 dBm (100 W) peak output power is described by means of some selected single- and multiband amplifier demonstrators. This progress has been mainly enabled by clear progress on GaN technology, device packaging, and PA design. Targeting at highly efficient single-band amplifier applications, a 2.7 GHz symmetrical Doherty amplifier with up to 45% drain efficiency at close to 45 dBm average output power under single-carrier W-CDMA (Wideband Code Division Multiple Access) operation using digital predistortion can be highlighted. In case of multiband capable amplifiers addressing software-defined radio applications, a class-AB-based demonstrator covering a frequency range from 1.8 to 2.7 GHz was realized. The amplifier showed >30% drain efficiency up to 2.5 GHz as well as up to 40 dBm average output power under single-carrier W-CDMA operation using proprietary digital predistortion. Finally, Alcatel-Lucent's activities on envelope tracking for future efficiency improved GaN-based amplifiers are described.

The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

This paper presents a detailed experimental analysis of the cyclostationary properties of low-frequency (LF) noise sources of microwave bipolar devices, in order to improve the LF noise description in compact models. Such models are used to help designers on predicting circuit performances such as phase and amplitude noise in oscillators. We start by reviewing the most relevant experimental and simulation results on the subject, and then investigate the model of conductance fluctuations proposed to explain the 1/f noise of carbon resistors. This simple linear case serves as a basis for understanding the complex case of a non-linear device under large-signal periodic operation. We then present the large-signal small-signal analysis of a pumped junction, focusing on the process of converting the fundamental LF noise process, a current fluctuation, into voltage fluctuations. We show why a stationary noise model would lead to an increase of the voltage noise observed around DC when the device is pumped, while the voltage noise would decrease if a cyclostationary model was used. A great amount of experimental data is presented not only to support our analysis, but also as a mean to distinguish between the two noise processes under consideration: stationary or cyclostationary. The goal of our noise measurement technique was to maximize the difference between those two concepts. Throughout the paper, we revisit some known concepts and show how some experimental results may lead to misinterpretations.

A novel scheme involving experimental analyses and diagnoses is presented for monitoring radio-frequency (RF) and high-speed circuits. A live electrooptic imaging (LEI) camera is used in the scheme and it provides real-time images of the phase evolution of the RF electric field. Besides, it is demonstrated that essential properties of RF wave propagation are easily grasped from visual images; examples of LEI movies and images from which such essential properties can be identified are presented. The subjects of the LEI observations, analyses, and diagnoses are planar RF circuits and a Gbps-class emitter-coupled-logic circuit. In addition, the results of analyses and diagnoses in the space domain are discussed.

The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.