The preferences of growing pigs for substrates were investigated by giving small groups of pigs a choice between two substrates in each test. The seven substrates examined were concrete, mushroom compost (spent), peat, sand, sawdust, straw and woodbark. Thirteen comparisons of pairs of substrates were tested with four replicates of each comparison. Eleven-week-old pigs (in groups of six) were placed in specially designed choice pens where they had access to two different substrates. The pigs were allowed to habituate to the pen for 1 week and at the end of week 2 the substrates were swapped. In weeks 2 and 3 the time spent by the pigs in each substrate was recorded. Peat, mushroom compost and sawdust were preferred most, with sand next and woodbark and straw being preferred only to concrete. It is suggested that growing pigs may be attracted to substrates which are similar in texture to earth.

Cognitive dysfunction is a symptomatic domain identified across many mental disorders. Cognitive deficits in individuals with major depressive disorder (MDD) contribute significantly to occupational and functional disability. Notably, cognitive subdomains such as learning and memory, executive functioning, processing speed, and attention and concentration are significantly impaired during, and between, episodes in individuals with MDD. Most antidepressants have not been developed and/or evaluated for their ability to directly and independently ameliorate cognitive deficits. Multiple interacting neurobiological mechanisms (eg, neuroinflammation) are implicated as subserving cognitive deficits in MDD. A testable hypothesis, with preliminary support, posits that improving performance across cognitive domains in individuals with MDD may improve psychosocial function, workplace function, quality of life, and other patient-reported outcomes, independent of effects on core mood symptoms. Herein we aim to (1) provide a rationale for prioritizing cognitive deficits as a therapeutic target, (2) briefly discuss the neurobiological substrates subserving cognitive dysfunction, and (3) provide an update on current and future treatment avenues.

The development of dynamic substrates that can modulate the behavior of adherent cells is important for fundamental studies in cell biology, applications in biomaterials, and engineering microsystems that combine cellular and material components. This review outlines several strategies based on physical transduction schemes (including electrical, photochemical, thermal, and mechanical forces) for designing interfaces that are active and can signal changes in the behavior of attached cells.

A rate equation model is developed to investigate the plasma assisted MBE growth of GaN in the presence of a fractional monolayer of Mg. Four distinct cases were identified and modeled - (i) Ga-limited regime (ii) Low N-limited regime (iii) Medium N-limited regime and (iv) High N-limited regime. In the model, it is assumed that Ga arriving on a Mg site undergoes faster incorporation into the epilayer through an exchange reaction compared to Ga arriving directly on a N surface. Additionally the incorporation rate of Ga was assumed to depend on the size of the Ga cluster. The results of the model are in good agreement with that of experiments. The non-monotonic behavior of growth rate with Ga flux for moderate Mg coverage is explained based on the incorporation rate dependence of Ga on the cluster size.

GaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH4/NH3 mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beginning of the growth, resulting in a kind of maskless ELO process with random opening sizes. This produces a significant decrease of the threading dislocation (TD) density compared to the best GaN/sapphire templates. Ultra Low Dislocation density (ULD) GaN layers were obtained with TD density as low as 7×107cm−2 as measured by atomic force microscopy (AFM), cathodoluminescence and transmission electron microscopy (TEM). Time-resolved photoluminescence experiments show that the lifetime of the A free exciton is principally limited by capture onto residual donors, similar to the situation for nearly dislocation-free homoepitaxial layers.

A new process for synthesis and bulk crystal growth of GaN is described. GaN single crystal c-plane platelets up to 9mm by 2mm by 100μm thick have been grown by the Chemical Vapor Reaction Process (CVRP). The reaction between gallium and a nitrogen precursor is produced by sublimation of solid ammonium chloride in a carrier gas, which passes over gallium at a temperature of approximately 900°C at near atmospheric pressures. Growth rates for the platelets were 25-100 μm/hr in the hexagonal plane. Seeded growth in the c-direction was also accomplished by re-growth on previously grown c-plane platelets. The crystals were characterized by X-ray diffractometry, atomic force microscopy, secondary ion mass spectrometry, inert gas fusion, and room temperature Hall effect and resistivity measurements.

We propose the use of a buffer sublayer made of materials with crystal structure of cubic syngony to eliminate 30° in-plane rotation of (0001) heteroepitaxial wurtzite type AIIIBV nitride films with respect to the (0001) or (110) working surface of the sapphire substrate. In these cases, the lattice parameter mismatch between the sapphire substrate surface and the semiconductor film is much smaller, and the cleavage planes of the sapphire and the semiconductor films with wurtzite structure forming the active region of a heterolaser are parallel. It is shown experimentally that using, for instance, Nb on (0001) Al2O3 or NbN on (110) Al2O3, allows the elimination of the 30° in-plane rotation of the (0001)AlN film with respect to the (0001) or (110) working surface of the sapphire substrate.

The (7×7) reconstructed (1 1 1) surface of silicon is found to be an excellent surface for the nucleation of epitaxial aluminum nitride, despite the +23.4% misfit in the AlN/Si system. AlN nucleated above the (7×7) to (1×1) transition temperature (830°C) is found to contain 30° misoriented grains, while films nucleated below the transition temperature are single orientation. Optimized aluminum nitride films grown on (7×7) silicon surfaces make excellent substrates for GaN heteroepitaxy.

In this paper, we report on the selective area growth (SAG) of GaN directly on patterned c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). A number of researchers have reported that the HVPE growth technique, unlike the MBE and MOCVD methods, is capable of producing device quality GaN films without the need for any low temperature nucleation/buffer layers. The density of edge dislocations in these HVPE films decreases dramatically as the film thickness is increased, and the dislocation density values for thick films (> 10μm) are comparable to those reported for the best GaN films grown by other methods on c-sapphire. These advantages of the HVPE growth technique makes it possible to achieve high quality selective area growth of GaN directly on c-sapphire substrates.

C-plane sapphire substrates were coated with PECVD SiO2 and photolithographically patterned with different size and shape openings. Subsequently, these patterned substrates were introduced in a horizontal, hot-wall quartz reactor for the GaN growth. It was observed that single crystal GaN growth was preferentially initiated in the openings in the oxide layer. This selective area growth was followed by epitaxial lateral overgrowth (ELO), leading to the formation of hexagonal GaN prisms terminated in smooth, vertical (100) facets. We have been successful in shearing these pyramid structures from the sapphire substrates as individual devices, which do not require any post-growth etching for feature definition. This procedure allows for the dramatic reduction of the process complexity and the duration and expense for GaN growth for device applications. Stimulated emission results on these self-formed optical cavities are also presented.

Three silicon-doped 3 µm thick GaN epilayers were grown simultaneously by metalorganic chemical vapour deposition on (0001) sapphire substrates misorientated by 0°, 4° and 10° toward the m-plane (100). A comparative study of these epilayers was undertaken using photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), cathodoluminescence (CL) imaging, CL spectroscopy and Hall effect measurements. Low temperature PL of the 0° and 4° epilayers shows donor bound exciton (BE) emission between 3.47 and 3.48 eV and a low level of yellow band emission. The peak intensities of both emission bands are a factor of 2 higher for the 4° layer. In the 10° epilayer, the BE band is 3x stronger than in the 0° epilayer but there is no discernible yellow band. However, a number of additional bands appear at 3.459, 3.417, 3.362, 3.345, 3.309, and 3.285 eV. These bands, some of which are acceptor related, may be attributed to the presence of structural defects in this epilayer, pointing to an abrupt degradation of its structural quality compared to the others. This degradation is confirmed by AFM studies. On a 20 µm x 20 µm image the 0° and 4° epilayers exhibit smooth surface morphologies, while the 10° epilayer shows a high density of hexagonal pits. Finally, SEM images reveal the surface of the 10° epilayer to be “streaked” and pitted. Low temperature CL images at 3.48 eV (bound exciton region) show random spotty emission, while those at 3.28 eV and 3.41 eV exhibit a streaky appearance similar to the SEM image. This suggests that these luminescence bands are indeed associated with structural defects.

Free standing GaN platelets were fabricated by hydride vapor phase epitaxy (HVPE). The platelets having a current maximum size of 7×6×0.1 mm3 were obtained by HVPE growth of ~100 μm thick GaN layers on SiC substrates and subsequent removal of the substrates by reactive ion etching (RIE). Surface of the GaN platelets was characterized by reflectance high energy election diffraction (RHEED), and Auger electron spectroscopy (AES). Crystal structure and optical properties of the platelets were studied by x-ray diffraction and photoluminescence (PL), respectively. Raman spectroscopy was also applied for material characterization. Residual strain was detected in the crystals. The stress was eliminated by high temperature anneal.

We have used plasma molecular beam epitaxy on (0 0 0 1) and (0 0 0 ) ZnO substrates to induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO substrates can be easily and unambiguously determined by measuring the sign of the piezoelectric coefficient. If we assume that N-face GaN grows on O face ZnO and that Ga-face GaN grows on Zn face ZnO, then we can study the growth of both Ga and N faces. The most striking difference is the doping behavior of the two faces. Growth on the Ga-face is characterized by a higher carrier concentration and a lower threshold for Ga droplet formation.

Undoped AlxGa1−xN layers with good surface morphology and very low electron concentration have been grown by MOCVD on sapphire substrates. The observed electrical and optical properties depend strongly on the growth temperature. Layers grown at 1000 °C exhibited low resistivity and strong optical absorption below the bandgap. In contrast,layers grown at 1050 °C had low carrier concentrations and good mobilities. Virtually no optical absorption near the band edge was observed as opposed to the usual situation in AlxGa1−xN. The electrical properties of these layers can be explained by the presence of donor centers whose energy increases with composition, and deeper lying compensating defects. The interaction of these centers renders the samples with x<0.2 highly resistive, with room temperature resistivity higher than 106 ohm-cm. SIMS data strongly suggest that the electrically active centers in our AlGaN layers are native defect-related. Implantation of Si ions into Al0.12Ga0.88N, and subsequent annealing at 1140 °C resulted in layers with electron concentration of 4.6 × 1017cm−3.

We present recent results on bulk GaN crystallization. The best quality GaN crystals grown from the solution at high N2 pressure without an intentional seeding are single crystalline platelets of stable morphology reaching dimensions up to 10 mm. The fastest growth direction for such crystals is [1 0 0], perpendicular to the GaN c-axis. The maximum stable growth rate perpendicular to crystal c-axis is determined from the experiment and used for an estimate of the effective supersaturation for the {10 0} face assuming two dimensional layer growth. The heat of GaN disssolution, determined from experimental solubility data, is used for the estimation of the edge energy of 2-D nuclei on the growing {10 0} face. Bulk crystal growth seeded by a single hexagonal needle with well developed {10 0} faces is also reported. The crystallization mechanisms and morphological stability in seeded growth of GaN are discussed on the basis of experimental results. The physical properties of the GaN crystals and homoepitaxial layers grown on them are briefly reviewed.

We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.

In this paper we compare gallium nitride (GaN) films grown by molecular beam epitaxy on sapphire (Al2O3), gallium arsenide (GaAs (111)B) and lithium gallate (LiGaO2) substrates. Atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and cathodoluminescence spectroscopy are used to characterise the films. From growth runs carried out to date, GaN films on GaAs substrates exhibit the best surface uniformity and the cleanest luminescence.

The salivary gland of Glossina morsitans contains cholinesterase activity which is distributed in a network surrounding each epithelial cell of the secretory region. The enzyme does not appear to be associated with any neural structures and is similar to cholinesterases of most insects in its reaction with inhibitors and in its ability to hydrolyze a wide range of substrates.