Metallic phase-change materials (PCMs) attract much attention due to their high thermal conductivity in thermal energy storage. Our previous work reported a kind of Cu@Cr@Ni bilayer capsules, which could endure at least 1000 thermal cycles between 1323 and 1423 K without leakage, and might be a potential high-temperature metallic PCM. This study numerically investigates the thermal energy charging performance of Cu@Cr@Ni capsules for recovering high-temperature waste heat at both constant and periodically fluctuant heat transfer fluid temperatures. It was revealed that only a short and slight sloped melting platform existed in the curve of outlet temperature due to the ultrahigh thermal conductivity of copper; with higher inlet velocities, the outlet and mean temperatures of such PCM increased and meanwhile the energy transfer efficiency decreased; the outlet and mean temperatures of the PCM and the liquid fraction in it were rather insensitive to the period of the inlet temperature fluctuation; and the amplitude of inlet temperature fluctuation, ±50 K, was sharply reduced to 5 K due to the thermal damping of the PCM.

A computer-controlled procedure is outlined here that first determines the position of the amorphous-crystalline interface in an image. Subsequently, from a time series of these images, the velocity of the crystal growth front is quantified. The procedure presented here can be useful for a wide range of applications, and we apply the new approach to determine growth rates in a so-called fast-growth-type phase-change material. The growth rate (without nucleation) of this material is of interest for comparison with identical material used in phase-change random access memory cells. Crystal growth rates in the amorphous phase-change layers have been measured at various temperatures using in situ heating in a transmission electron microscope. Doped SbTe films (20 nm thick) were deposited on silicon nitride membranes, and samples with and without silicon oxide capping layer were studied. The activation energy for growth was found to be 3.0 eV. The samples without capping layer exhibit a nucleation rate that is an order of magnitude higher than the samples with a silicon oxide capping layer. This difference can be attributed to the partial oxidation of the phase-change layer in air. However, the growth rates of the samples with and without capping are quite comparable.