We have recently reported the synthesis of one-dimensional
nanobelt structures of ZnO, SnO2,
In2O3, CdO, Ga2O3,
and PbO2 by evaporating the desired commercial metal
oxide powders at high temperatures (Science (2001),
291, 1947). The as-synthesized oxide nanobelts are pure,
structurally uniform, single crystalline, and most of them free
from dislocations. The beltlike morphology appears to be a unique
and common structural characteristic for the family of
semiconducting oxides. In the present article, we focus on the
twin and stacking fault planar defects found in oxide nanobelts
and nanowires although they are rarely observed. Some interesting
and unique growth morphologies are presented to illustrate the
roles played by surface energy and kinetics in growth. It is
shown that the surfaces of the oxide nanobelts are enclosed
by the low-index, low-energy crystallographic facets. The growth
morphology is largely dominated by the growth kinetics.