Surface-sensitive electron spectroscopies, like Auger electron
spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron
spectroscopy (EPES) are suitable techniques to investigate surfaces and
thin layers. A theoretical model for electron transport is needed to
process the observed electron spectra. Electron transport descriptions are
based on the differential elastic cross sections for the sample atoms and
the inelastic mean free path (IMFP) of backscattered electrons. An
electron impinging on the sample can lose energy either due to surface or
volume excitations. In the present work a Monte Carlo (MC) simulation of
the elastic peak of Si, Ag, Ni, Cu, and Au for surface analysis is
presented. The IMFP of Si was determined applying the EPES method. The
integrated elastic peak ratio of Si with the standard metal reference
samples corrected for surface excitation provided IMFP values of Si in the
energy range E = 0.2–2.0 keV. Experiments were made with
the ESA 31 HSA (ATOMKI) and with the DESA-100 (Staib) spectrometers.
Surface correction was based on the application of Chen's model and
material parameters. The Monte Carlo simulations of elastically
backscattered electron trajectories were made using new EPESWIN software
of Jablonski. An improvement of IMFP experimental results was achieved
applying the presented procedure.