The Al–50Si alloy, as a kind of potential electronic packaging material, is manufactured by different methods, such as casting and spray deposition. The possible influences of the P refiner on the microstructure of the Al–50Si alloy are investigated at different cooling rates. The refinement mechanism of primary Si phase is discussed in view of the P refiner addition, and the variation of the cooling rates. The thermal conductivity (TC), as a key parameter for electronic materials, is measured. The coupled effects of the cooling rate and the addition of the P refiner during the solidification of the Al–50Si alloy on the TC are elucidated based on structural observations. Furthermore, the porosity in the Al–50Si alloy is treated as a second phase influencing the TC.
