Na0.5Bi0.5TiO3-based ceramics have been paid great attention as Pb-free piezoelectric and electrical energy storage materials. Here, adding 10 mol% BiFeO3 in Na0.5Bi0.5TiO3–SrTiO3 binary system, 0.5Na0.5Bi0.5TiO3–0.4SrTiO3–0.1BiFeO3 ceramics were prepared by a conventional solid-state reaction method. Dielectric measurements reflected a near-plateau dielectric response at high temperature, e.g., the mid-dielectric permittivity of 2052 with the variation within ±10% from 57 to 371 °C and within ±15% from 54 to 371 °C for the ceramic sintered at 1100 °C. At a moderate electric field of 70 kV/cm, a capacitor made by the ceramic has an electrical energy storage density of 0.95 J/cm3, while the polarization has yet saturated at the moderate electric field. These results suggest that 0.5Na0.5Bi0.5TiO3–0.4SrTiO3–0.1BiFeO3 ceramic is a promising novel material with thermally stable dielectric permittivity and high electrical energy storage property for applications in high-temperature electronics.

SiC and Ga2O3 are promising wide band gap semiconductors for applications in power electronics because of their high breakdown electric field and normally off operation. However, lack of a suitable dielectric material that can provide high interfacial quality remains a problem. This can potentially lead to high leakage current and conducting loss. In this work, we present a novel atomic layer deposition process to grow epitaxially MgxCa1−xO dielectric layers on 4H-SiC(0001) and β-Ga2O3$\left( {\bar 201} \right)$ substrates. By tuning the composition of MgxCa1−xO toward the substrate lattice constant, better interfacial epitaxy can be achieved. The interfacial and epitaxy qualities were investigated and confirmed by cross-sectional transmission electron microscopy and X-ray diffraction studies. Mg0.72Ca0.28O film showed the highest epitaxy quality on 4H-SiC(0001) because of its closest lattice match with the substrate. Meanwhile, highly textured Mg0.25Ca0.75O films can be grown on β-Ga2O3$\left( {\bar 201} \right)$ with a preferred orientation of (111).

We describe how the development of advanced materials via high-throughput experimentation at Intermolecular® is accelerated using guidance from modelling, machine learning (ML) and other data-driven approaches. Focusing on rapid development of materials for the semiconductor industry at a reasonable cost, we review the strengths and the limitations of data-driven methods. ML applied to the experimental data accelerates the development of record-breaking materials, but needs a supply of physically meaningful descriptors to succeed in a practical setting. Theoretical materials design greatly benefits from the external modelling ecosystems that have arisen over the last decade, enabling a rapid theoretical screening of materials, including additional material layers introduced to improve the performance of the material stack as a whole, “dopants” to stabilize a given phase of a polymorphic material, etc. We discuss the relative importance of different approaches, and note that the success rates for seemingly similar problems can be drastically different. We then discuss the methods that assist experimentation by providing better phase identification. Finally, we compare the strengths of different approaches, using as an example the problem of identifying regions of thermodynamic stability in multicomponent systems.

Formulated, processed, and dried Aloe polysaccharides thin film sandwiched between ITO as bottom electrode and Au as top electrode has been adopted as an artificial synapse to emulate behavior of neuromorphic computing. The synaptic plasticity or weight has been modulated with this simple metal-insulator-metal structure by applying voltage sweep and voltage pulse, with excitatory postsynaptic current being monitored. Synaptic potentiation and depression has been demonstrated by applying 6 consecutive sweeps of voltage in positive and negative polarity, respectively. By varying number (10 – 50) of voltage pulses, variable synaptic weight has been measured with paired pulse facilitation and post-tetanic potentiation indexes of 2.61x10-6and 1.45x10-4, respectively. The short-term plasticity and long-term potentiation can be clearly revealed when applying 40 pulses and beyond, with extracted time constants of approximately 28 s at 40 pulses and 90 s at 50 pulses.

Capacitors represent the largest obstacle to dynamic random-access memory (DRAM) technology evolution because the capacitor properties govern the overall operational characteristics of DRAM devices. Moreover, only the atomic layer deposition (ALD) technique is used for the dielectric and electrode because of its extreme geometry. Various high-k materials deposited by ALD have been investigated for further scaling. Whereas past investigations focused on increasing the physical thickness of the dielectric to suppress leakage current, the physical thickness of the dielectric should also be limited to a few nanometers in design rules less than 1×-nm. Therefore, a new way to overcome the limitations of traditional approaches based on thorough understanding of high-k materials is highly recommended to enhance the properties of conventional materials and provide directions for developing new materials. In this review, previously reported results are discussed, and suggestions are made for further investigations for DRAM capacitor applications.

Frequent switching of resistive memory cell may lead to a local accumulation of Joules heat in the device. Since the ReRAM cells are arranged in crossbar arrays with the two electrodes running perpendicular to each other, the heat generated in one device spreads via common electrode metal lines to the neighboring cells causing their performance degradation. Also cells that do not share any of the two electrodes (e.g. the diagonal array cells) with the hot device may also degrade provided the intermediate cells are set to an on-state establishing thus a continuous thermal conduction path between the heated and the probed device. It is found that the heat conduction along the active Cu electrode is more pronounced than that along the inert Pt electrode. Devices with Rh inert electrode performed better than those with Pt electrode due to better heat conductivity properties of Rh vs Pt. The heat dissipation is also found worse for a heated device with narrow and thin lines causing, however less degradation of more distant neighbor cells than for wide and thick metal lines. Finally, there is a trade-off between dissipating the heat quickly form the heated device to increase its maximum switching cycles and the heat exposure of the neighboring devices.

In situ synthesis of Ag nanoparticles in polyvinylidene fluoride (PVDF) was investigated using different stabilizers such as 3-aminopropyltrimethoxysilane (APS) and 1-dodecanethiol (thiol). Although PVDF is a matrix, it also functions as a stabilizer. Results of UV-vis spectroscopy showed that when APS or PVDF was used, Ag nanoparticles were formed. Yet no formation occurred when thiol was used due to the complexation of Ag+ ions by thiol. Polar groups on stabilizers has an important effect on complexation process. APS, a nitrogen-based ligand, has hard base character inhibiting the complexation between Ag+ and APS. Consequently, Ag+ ions are reduced to Ag nanoparticles in N,N dimethyl formamide (DMF), which acts as a solvent and reducing agent. Transition Electron Microscopy (TEM) image showed a uniform distribution of spherical Ag nanoparticles in PVDF matrix in the presence of APS. The electrical properties of flexible nano-metal polymer were tested and the highest improvements in breakdown strength and energy density of 33 and 58 %, respectively were measured with 0.05 wt.% Ag content and APS as a stabilizer.

Sol-gel blends are created using a combination of a high refractive index (n∼2.4) TiO2 based sol-gel and a low refractive index (n∼1.5) SiO2 based sol-gel. The blends are prepared with different ratios of sol-gels and films are created using the spin coating method on silicon and ITO-on-glass substrates. The film thickness, refractive index, and dielectric constants of the resulting films are measured using profilometry, prism coupling, and LCR measurements, respectively. Results show that including more SiO2 based sol-gel in the initial mixture creates thicker films ranging from 1-7 μm, but results in lower refractive index and lower dielectric constants. This is consistent with expectations due to SiO2 having a lower refractive index and dielectric constant than titania over a range of wavelengths andfrequencies. The ability to fine tune the properties is explored.

In this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide interface trap densities (High Voltage HF MOS CV), measured the device channel doping profile for both 4H SiC and silicon, gate metal workfunction, and simulated the effects on DC/AC performance.

To date only few low-cost bio-based materials have been reported to be useful as TENGs. However, they still keep employing costly nanofabrication techniques. Herein, a new bio-based starch-cellulose TENG is fabricated without using complex equipment for the first time. Our results showed that, depending on the film thickness, electric outputs varied from 60 mV to 300 mV per 4 cm2 area. The thicker the film, the lower the electrical outputs, and vice versa. Moreover, FTIR-ATR analysis also showed that no chemical modification was made on the surface of starch after casting. Therefore, starch remained unmodified at the time of characterization, being this performance proper of a pristine starch. In addition, though organic starch isolation, fabrication of the proposed TENG was entirely handmade, thus avoiding use of complex equipment of nano- and micro-fabrication which resulted in the development of an eco-friendly TENG with very good performance according to the state-of-the-art.

Dynamic random-access memory (DRAM) is the main memory in most current computers. The excellent scalability of DRAM has significantly contributed to the development of modern computers. However, DRAM technology now faces critical challenges associated with further scaling toward the ∼10-nm technology node. This scaling will likely end soon because of the inherent limitations of charge-based memory. Much effort has been dedicated to delaying this. Novel cell architectures have been designed to reduce the cell area, and new materials and process technologies have been extensively investigated, especially for dielectrics and electrodes related to charge storage. In this article, the current issues, recent progress in and the future of DRAM materials, and fabrication technologies are discussed.

Heat-assisted magnetic recording (HAMR) is the next-generation technology that is required to deliver areal densities in excess of 2 terabit/in2 for high-capacity, low-cost hard drives.The recording process relies on spatially and temporally localized heating of the media surface to lower its coercivity during the magnetic writing process. This scheme drives substantial changes to the recording head write element architecture, combining the conventional electromagnet structure with integrated optical light delivery layers, focusing optics, and plasmonic nanostructures to generate subwavelength optical spots. Power losses associated with the strong optical fields required for heating the media can cause local temperatures in excess of 400°C at the recording head surface. Coupled with high pressures, an oxidative/corrosive air-bearing environment, and a sub-3 nm head-media spacing, this introduces new challenges for the functional materials in recording heads required to balance performance and long-term reliability demands. Here, we briefly review specific challenges associated with HAMR heads, highlighting the major requirements, failure modes, and needed innovations for the near-field transducer and optical-waveguide subsystems.

In this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.

Development of solid polymer electrolytes has potential applications for battery technology. Membranes should be environment friendly and also have high conductivity. We use chitosan, cellulose and graphene in this research. In this work, 1% (w/v) of chitosan powder and 1.5% (w/v) of acetic acid were dissolved in double distilled water. The solution was heated to 60°C under constant stirring until the chitosan powder was completely dissolved and a semi-transparent thick chitosan solution was obtained. To this chitosan solution, appropriate amounts of graphene (grade H5-XG Sciences) was added to have 5, 10, 20 and 30% graphene (weight with respect to chitosan). The solution was sonicated for dispersing graphene and then 100ml of it was poured on plastic dishes with and without cellulose fabric in it. The films were dried by slow evaporation technique. The sample thickness varied from 200 to 300µm. SEM images showed that chitosan film formed on cellulose and had grid like structures. Chitosan deposited more on the fibres of the cellulose. This is attributed to the rectangle shaped micro pores of cellulose fabric. From the cross section of the films, it was observed that graphene arranged in stacks along the plane of the cellulose fabric and the fabric became darker as graphene concentration increased. The dielectric properties such as dielectric constant, impedance, conductivity and dissipation factor were measured from 102 - 106 Hz. The conductivity of the sample increased as the frequency increased. The conductivity of the samples at room temperature increased with increase in graphene concentrations. The conductivity varied from 10-8 to 10-5 S/Cm as the graphene concentration increases from 0 to 30%. Hence conductivity increases significantly as graphene concentration increases. From the dissipation factor for the films, the relaxation process could be observed in the frequency ranging from 102 to 105 Hz. It is observed that as frequency increases, the relaxation tend to shift towards higher frequency indicating that graphene affects the relaxation of the polymer nanocomposite. At high frequency (106Hz) dissipation factor for cellulose fabric, chitosan in cellulose, chitosan with 5% graphene in cellulose, chitosan with 10% graphene in cellulose, chitosan with 20% graphene in cellulose, chitosan with 30% graphene in cellulose are 0.14, 0.19, 0.4, 0.8 and 1.38 respectively. This shows that dissipation factor increases as the graphene concentration increases. This implies that graphene improves heat dissipation in these films. The dielectric constant was observed to be maximum for chitosan with 30% graphene in cellulose indicating that the graphene may assemble into percolation networks at higher concentrations of graphene (20 and 30%).

Epitaxial layers of insulating binary lanthanide oxides have been considered as potential alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET devices, which was investigated in more detail for epitaxial Gd2O3 and Nd2O3 as model systems. Additionally, the ability to integrate epitaxial dielectric barrier layers into Si structures can usher also in a variety of novel applications involving oxide/silicon/oxide heterostructures in diverse nanoelectronic and quantum-effect devices. Although epitaxial layers of such ionic oxides with excellent structural quality can be grown using molecular beam epitaxy, they often exhibit poor electrical properties such as high leakage current density, flat band instability, poor reliability etc. owing to the presence of electrically active charge defects, generated either during the oxide layer growth or typical subsequent CMOS process steps. Based on the origin and individual character of these defects, we review various aspects of defect prevention and passivation which lead to a significant improvement in the dielectric properties of the heterostructures.

A thin-film field-effect transistor (TFT) is a three-terminal device comprising source, drain, and gate electrodes, a dielectric layer, a semiconductor layer, and a substrate. The TFT is a fundamental building component in a variety of electronic devices. Developing an intrinsically stretchable TFT entails availability and usage of a functional material with elastomeric deformability in response to an externally applied stress. This represents a major materials challenge. In this article, we survey strategies to synthesize these elastomeric functional materials, and how these materials are assembled to fabricate intrinsically stretchable TFT devices. Developing solution-based printing technology to assemble intrinsically stretchable TFTs is considered a prospective strategy for wearable electronics for industrial adaptation in the near future.

MG/HK was introduced into CMOS technology and enabled scaling beyond the 45/32nm technology node. The change in gate stack from poly-Si/SiON to MG/HK introduced new reliability challenges like the positive bias temperature instability (PBTI) and stress induced leakage currents (SILC) in nFET devices which prompted thorough investigation to provide fundamental understanding of these degradation mechanisms and are nowadays well understood. The shift to a dual-layer gate stack also had a profound impact on the time dependent dielectric breakdown (TDDB) introducing a strong polarity dependence in the model parameter. As device scaling continues, stochastic modeling of variability, both at time zero and post stress due to BTI, becomes critical especially for SRAM circuit aging. As we migrate towards novel device architectures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices, impact of self-heating needs to be accounted for in reliability testing.

In this paper we summarize the fundamentals of MG/HK reliability and discuss the reliability and characterization challenges related to the scaling of future CMOS technologies.

We explore some aspects of the optimization of amorphous semiconductors as well as low- and high-dielectric-constant (low-/high-k) materials viewed purely from the perspective of percolation and topological constraint theories. We specifically illustrate how percolation, constraint theory, and mean network coordination, 〈r〉, play underlying roles in determining the electrical and mechanical properties of amorphous semiconducting and dielectric materials as well as interfaces that are important for modern micro-/nanoelectronic devices.