In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2−x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.

An analysis of the nucleation mechanism of pyramids formed in (100) silicon in Na2CO3/NaHCO3 solution has been carried out. This texturization process of silicon by means of Na2CO3/NaHCO3 solutions is of special interest because it can be applied to the silicon solar cell industry to texture solar cell surfaces to decrease the front reflection and enhance light trapping in the cells. For this purpose, two microscopy techniques—scanning electron microscopy and atomic force microscopy—have been used to study the different stages of pyramidal nucleation and formation. The different aspects and factors involved in the texturization process require different analysis conditions and microscopy resolution. Tracing the transformation of determined surface areas and structures has been achieved, contributing clarification of the mechanism of pyramid nucleation in Na2CO3/NaHCO3 solutions.