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Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 7 / Issue 3-4 / June 2015
- Published online by Cambridge University Press:
- 10 April 2015, pp. 279-285
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A rugged 100 W high-voltage vertical MOSFET L-band radar device
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 1 / Issue 4 / August 2009
- Published online by Cambridge University Press:
- 19 June 2009, pp. 277-284
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