The present study investigated the adsorption of fluorides in natural zeolites clinoptilolite-type, sourced in Sonora, Mexico, and modified with Fe. Characterization of the material was carried out along with determination of kinetic parameters varying time and concentration of reagents to calculate maximum adsorption capacity. To determine thermodynamic parameters temperature was varied for accurate characterization of the adsorption process. It was found that the zeolite fixed Fe in its structure without model significant modification, likewise when put in contact with a fluoride solution (F-), it was capable of taking up these ions through adsorption due to the interaction between the sorbato and the pollutant. The kinetics best fit Pseudo-second-order model with Qmax=0.91 mgg-1, therefore it indicates that the process is reversible, spontaneous and endothermic what can favor the reuse of the material.

The use of in situ formed protective layer on conversion cathodes was introduced as a cheap and simple strategy to shield these materials from undesirable interactions with liquid electrolytes.

Conversion-type cathodes have been viewed as promising candidates to replace Ni- and Co-based intercalation-type cathodes for next-generation lithium (Li) and Li-ion batteries with higher specific energy, lower cost, and potentially longer cycle life. Typically, in conversion reactions two or three Li ions may be stored per just one atom of chalcogen (e.g., S or Se) or transition metal (e.g., Fe or Cu used in halides). Unfortunately, in conversion chemistries the active materials or intermediate charge/discharge products suffer from various unfavorable interactions and dissolution in organic electrolytes. In this mini-review article, we discuss the current interfacial challenges and focus on the protective layers in situ formed on the cathode surface to effectively shield conversion materials from undesirable interactions with liquid electrolytes. We further explore the mechanisms and current progress of forming such protective layers by using various salts, solvents, and additives together with the insight from molecular modeling. Finally, we discuss future opportunities and perspectives of in situ surface protection.

Using fully reactive molecular dynamics methodologies we investigated the structural and dynamical aspects of the fluorination mechanism leading to fluorographene formation from graphene membranes. Fluorination tends to produce significant defective areas on the membranes with variation on the typical carbon-carbon distances, sometimes with the presence of large holes due to carbon losses. The results obtained in our simulations are in good agreement with the broad distribution of values for the lattice parameter experimentally observed. We have also investigated mixed atmospheres composed by H and F atoms. When H is present in small quantities an expressive reduction on the rate of incorporation of fluorine was observed. On the other hand when fluorine atoms are present in small quantities in a hydrogen atmosphere, they induce an increasing on the hydrogen incorporation and the formation of locally self-organized structure of adsorbed H and F atoms.

Superhydrophobic membranes have the potential to protect devices from incidental exposure to water. This paper reports on the processing of Teflon AF fluoropolymers through electrospinning. Teflon AF is difficult to electrospin due to its low dielectric constant and the low dielectric constants of the liquids in which it is soluble. The two approaches that have been utilized to produce fibers are direct electrospinning in Novec engineering liquids and core-shell electrospinning. Both methods produced superhydrophobic membranes. Fibers with an average diameter of 290 nm and average water contact angle of 151° were obtained by core-shell electrospinning. One suggested application for electrospun superhydrophobic membranes is the lithium-air battery.

In this work the Si interstitial contribution of F+ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that approximately 0.4-0.5 Si interstitials are generated per implanted F+ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F+ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F+ is co-implanted with Si+ compared to the sample only implanted with Si+, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F+ implant has contributed to enhance B diffusion.

The advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.

This paper gives another construction of (0, p)-forms on a complex analytic space and of the operator. This construction is independent of the one in [1] and apart from the general result of Section 1 of [1], it can be read independently. As in [1], the hypotheses on S are the following: S has normal singularities, its singular locus X is smooth, the exceptional divisor in a desingularization of S is irreducible.