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Nitrogen Distribution and Oxidation of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2
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- Journal:
- MRS Online Proceedings Library Archive / Volume 811 / 2004
- Published online by Cambridge University Press:
- 28 July 2011, D7.2
- Print publication:
- 2004
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- Article
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