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High Quality Growth of SiO2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 685 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, D13.1.1
- Print publication:
- 2001
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- Article
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