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PN Junction Formation for High-Performance Insulated Gate Bipolar Transistors (IGBT); Double-Pulsed Green Laser Annealing Technique
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- Journal:
- MRS Online Proceedings Library Archive / Volume 912 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0912-C03-11
- Print publication:
- 2006
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- Article
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