Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT.
Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. in MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However, a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysts in carbon nanotube growth. It is also interesting to know the how temperature and pressure affect the interface of carbon species and catalyst particles.