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Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated from 3-Inch Epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 805-810
- Print publication:
- 1999
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Uniformity and Performance Characterization of GaN P-I-N Photodetectors Fabricated From 3-Inch Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G7.6
- Print publication:
- 1998
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Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 51
- Print publication:
- 1997
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High Temperature GaN and AlGaN Photovoltaic Detectors for UV Sensing Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1065
- Print publication:
- 1997
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