5 results
Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 115-118
- Print publication:
- July 2004
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Unusual properties of C-T characteristics of hydrogen implanted and annealed Si
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 141-144
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- July 2004
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DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 213-217
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- July 2004
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Study of DX Centers in GaAs1−xPx :Te
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 589
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- 1987
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DX Center Analysis in Sn DOPED AlGaAs Layer of Double Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 579
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- 1987
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