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Influence of high-index GaAs substrates on the 2D electron density of δ-doped pHEMT with an additional InxGa1-xAs (x > 0.15) thin layer embedded in the channel
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- Journal:
- The European Physical Journal - Applied Physics / Volume 29 / Issue 3 / March 2005
- Published online by Cambridge University Press:
- 21 December 2004, pp. 209-213
- Print publication:
- March 2005
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- Article
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