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Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 308-314
- Print publication:
- 2000
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P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 233-238
- Print publication:
- 1999
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Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W3.81
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- 1999
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P- and N-Type Doping of Mbe Grown Cubic GaN/GaAs Epilayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.24
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- 1998
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P-Type Conductivity with a High Hole Mobility in Cubic GaN/GaAs Epilayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 615
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- 1996
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