4 results
Low Resistivity Nickel Germanosilicide Contacts to Ultra-shallow Junctions Formed by the Selective Si1-x Gex Technology for Nanoscale CMOS
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D7.7
- Print publication:
- 2003
-
- Article
- Export citation
Nickel, Platinum and Zirconium Germanosilicide Contacts to Heavily Phosphorous Doped Silicon-Germanium Alloys for Advanced CMOS Source/Drain Junctions
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N4.11
- Print publication:
- 2002
-
- Article
- Export citation
Nickel, Platinum and Zirconium Germanosilicide Contacts to Ultra-shallow, P+N Junctions Formed by Selective SiGe Technology for CMOS Technology Nodes Beyond 70nm
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 716 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, B10.7
- Print publication:
- 2002
-
- Article
- Export citation
A Study on Solid Phase Reactions of Ni and Pt on Si-Ge Alloys as Contacts to Ultra-Shallow P+N Junctions for CMOS Technology Nodes Beyond 70nm
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K7.2
- Print publication:
- 2001
-
- Article
- Export citation