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Physical Properties of Silicon Doped Hetero-Epitaxial MOCVD Grown GaN: Influence of Doping Level and Stress
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W5.9
- Print publication:
- 1999
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- Article
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