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In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 102 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 319
- Print publication:
- 1987
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- Article
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