In this study, we propose new approach to study on hydrogen implantation
into SiC crystalline structure and its effect on thermal oxidation.
This paper has investigated on effects of hydrogen implantation into the
surface structure of 6H-SiC crystal before and after thermal oxidation in
oxygen ambient. H ions were implanted in SiC with dose of
1×1016 atoms/cm2 and energy of 15 keV. AFM results of implanted and
non-implanted areas show that roughness in the implanted area is more than
the non-implanted but, we could not observe any evidence of implanting
effect in the nano scrapes which were created during polish process. Also,
crystal quality, effect of H implantation and depth of maximum concentration
were determined by RBS- Channeling. Moreover, it shows that the collision of
H ions has affected on the SiC atoms. Distribution and dose of
H ions were
estimated by ERD technique. Furthermore, bonding between SiC atoms was
investigated in implanted and non-implanted areas by FTIR technique. In
addition, FTIR results in two areas show a significant difference between
both areas before and after oxidation in oxygen ambient.