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The energy band diagram and photovoltaic characteristic of nano p-AgInTe2/n-CdS0.4Se0.6 heterojunction

Published online by Cambridge University Press:  13 December 2007

A.M.A. El-Barry
A.M.A. El-Barry*
Affiliation:
Thin film laboratory, Physics Department, Faculty of Education, Ain Shams University, 11757 Cairo, Roxy, Egypt
*
[email protected]
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Abstract

Nano p-AgInTe2/n-CdS0.4Se0.6 heterojunction was constructed. The dark – current – voltage – characteristics of the prepared junction have been investigated in a temperature range from ~303 to 423 K. The operating conduction mechanism was found to be Pool-Frenkel emission for T > 323 K and V < +0.8 volt. The supposed band diagram of p-AgInTe2/n-CdS0.4Se0.6 heterojunction is exhibited. Analysis of the photovoltaic characteristic, at room temperature and under illumination of ~2.7 W/m2, lead to the determination of some solar cell parameters, such as; the short circuit current, the open circuit voltage, the fill factor and the power conversion efficiency.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 40 , Issue 3 , December 2007 , pp. 241 - 246
Copyright
© EDP Sciences, 2007

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