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Void Growth as a Function of Residual Stress Level in Thin, Narrow Aluminum Lines

Published online by Cambridge University Press:  15 February 2011

M. A. Korhonen ,
P. Børgesen ,
C. A. Paszkiet ,
J. K. Lee  and
Che-Yu Li
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, NY 14853
P. Børgesen
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, NY 14853
C. A. Paszkiet
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, NY 14853
J. K. Lee
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, NY 14853
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Abstract

High tensile stresses develop in passivated aluminum line metallizations on silicon substrates after excursion to elevated temperatures. The principal mechanisms to relax these stresses at room temperature are plastic deformation and grain boundary void growth. It is shown that stress relaxation and void growth are intimately connected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 155
Copyright
Copyright © Materials Research Society 1991

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References

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