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Understanding the Electro-thermal and Phase-transformation Processes in Phase-change Materials for Data Storage Applications

Published online by Cambridge University Press:  01 February 2011

C. D. Wright
Affiliation:
School of Engineering, Computer Science and Mathematics, University Of Exeter, Exeter EX4 4QF, UK
M. Armand
Affiliation:
School of Engineering, Computer Science and Mathematics, University Of Exeter, Exeter EX4 4QF, UK
M. M. Aziz
Affiliation:
School of Engineering, Computer Science and Mathematics, University Of Exeter, Exeter EX4 4QF, UK
S. Senkader
Affiliation:
School of Engineering, Computer Science and Mathematics, University Of Exeter, Exeter EX4 4QF, UK
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Abstract

Attempts at the practical utilization of Sb-Te based alloys beyond optical data storage have been made recently by employing these materials in both scanning probe type memories, and in electrical memory devices - namely Phase-Change Random Access Memory (PC-RAM). We have developed models to simulate the electrical, thermal, and phase-change characteristics of this important class of material. In this paper we describe the physical basis of our models and present simulation results for different memory configurations and operating conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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