Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-20T06:37:12.011Z Has data issue: false hasContentIssue false
  • English
  • Français

Understanding Multi Scale Pad Effects in Chemical Mechanical Planarization

Published online by Cambridge University Press:  31 January 2011

Abhijit Chandra ,
Ashraf. F. Bastawros  and
Pavan K. Karra
Abhijit Chandra
Affiliation:
[email protected], Iowa State University, 2025 Black Engineering, Ames, Iowa, 50011, United States
Get access

Abstract

A multi-physics model encompassing chemical dissolution and mechanical abrasion effects in CMP is developed. This augments a previously developed multi-scale model accounting for both pad response and slurry behavior evolution. The augmented model is utilized to predict scratch propensity in a CMP process. The pad response delineates the interplay between the local particle level deformation and the cell level bending of the pad. The slurry agglomerates in the diffusion limited agglomeration (DLA) or reaction limited agglomeration (RLA) regime. Various nano-scale slurry properties significantly influence the spatial and temporal modulation of the material removal rate (MRR) and scratch generation characteristics. The model predictions are first validated against experimental observations. A parametric study is then undertaken. Such physically based models can be utilized to optimize slurry and pad designs to control the depth of generated scratches and their frequency of occurrence per unit area.

Keywords

machiningnano-indentationnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1157: Symposium E – Science and Technology of Chemical Mechanical Planarization (CMP) , 2009 , 1157-E02-01
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Martinez, M.A, 1994, Solid State Technology.Google Scholar
[2] Komanduri, R, 1996, On material removal mechanisms in finishing of advanced ceramics and glasses, Annals of the CIRP, 45:509–514.Google Scholar
[3] Evans, C.J., Paul, E., Dornfeld, D., Lucca, D.A., Byrne, G., Tricard, M., Klocke, F., Dambon, O., Mullany, B.A, 2003, Material removal mechanisms in lapping and polishing, Annals of the CIRP, 52/2:611–634.Google Scholar
[4] Wang, C., Sherman, P., Chandra, A., Dornfeld, D., 2005, Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical MechanicalPlanarization, Annals of the CIRP, 54/1:309–312.Google Scholar
[5] Bastawros, A.F., Chandra, A., Guo, Y., Yan, B., 2002, Pad Effects on Material Removal Rate in Chemical Mechanical Planarization, J. Electronic Materials, 31/10:1–10.Google Scholar
[6] Luo, J., Dornfeld, D., 2003, Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification, IEEE Trans. Semiconductor Manufacturing, 16/3:469–476.Google Scholar
[7] Lin, M Y., Lindsay, H.M., Weitz, D.A., Klein, R., Ball, R.C., Meakin, P., 1989, Universality of Fractal Aggregates as Probed by Light Scattering, Proceedings of the Royal Society of London A, 423/1864:71–87.Google Scholar
[8] Lin, M Y., Lindsay, H.M., Weitz, D.A., Klein, R., Ball, R.C., Meakin, P., 1990, Universal diffusion-limited colloid aggregation, Journal of Physics: Condensed Matter, 2:3093–3113.Google Scholar
[9] Ball, R.C., Weitz, D.A., Witten, T.A., Leyvraz, F., 1987, Universal kinetics in reaction limited aggregation, Physical Review Letters, 58/3.Google Scholar
[10] Komulski, Marek, 2001, Chemical properties of material surfaces, New York.Google Scholar
[11] Che, W., Guo, Y.J., Chandra, A., Bastawros, A., 2005, A Scratch Intersection Model of Material Removal During Chemical Mechanical Planarization (CMP), Journal of Manufacturing Science and Engineering, 127/3:545–554.Google Scholar
[12] Bastaninejad, M., Goodarz, A., 2005, Modeling the Effects of Abrasive Size Distribution, Adhesion and Surface Plastic Deformation on Chemical-Mechanical Polishing, J. of The Electrochemical Society, 152/9: 1875–1877.Google Scholar
[13] Che, W, Bastawros, A, Chandra, A, et al., Surface evolution during the chemical mechanical planarization of copper, CIRP Annals-Manufacturing Technology, Volume: 55, Issue: 1, Pages: 605–608 Published: 2006.Google Scholar
[14] Chandra, A., P, Karra and M, Dorothy., Implications of Arrow's Theorem in Modeling of Multiscale Phenomena: An Engineering Approach, Submitted to Journal of Design, also presented at NSF CMMI Grantee conference, Knoxville, Jan 2008.Google Scholar
[15] Chandra, A., Unpublished work, 2009.Google Scholar
[16] Armini, S., 2007, Composite particles for chemical-mechanical planarization applications, Dissertation, IMEC, Kapeldreef 75, Leuven, Belgium.Google Scholar
[17] Gopal, T., Talbot, J.B., Use of Slurry Colloidal Behavior in Modeling of Material Removal Rates in CMP, Journal of The Electrochemical Society, 154/6, H507–H511, 2007.Google Scholar
[18] Boroucki, L., Mathematical Modeling of Polish-rate Decay in Chemical-Mechanical Polishing, Journal of Engineering Mathematics 43, 105–114, 2002.Google Scholar