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Two-Band Tunneling Currents and Stress-Induced Leakage in Ultra-Thin SiO2 Films

Published online by Cambridge University Press:  10 February 2011

S. Okhonin ,
A. Ils ,
D. Bouvet ,
P. Fazan ,
G. Guegan ,
S. Deleonibus  and
F. Martin
S. Okhonin
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, [email protected]
A. Ils
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, [email protected]
D. Bouvet
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, [email protected]
P. Fazan
Affiliation:
Institute for Micro-and Optoelectronics and Electronics Laboratory LEG, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland, [email protected]
G. Guegan
Affiliation:
LETI Département de Microelectronique CEA-Grenoble 17, 38054 Grenoble Cedex 9, France
S. Deleonibus
Affiliation:
LETI Département de Microelectronique CEA-Grenoble 17, 38054 Grenoble Cedex 9, France
F. Martin
Affiliation:
LETI Département de Microelectronique CEA-Grenoble 17, 38054 Grenoble Cedex 9, France
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Abstract

The conduction band and valence band electron tunneling currents in ultra-thin SiO2 films at the transition from direct to Fowler-Nordheim tunneling regimes are studied. The slopes of the current voltage characteristics agree well with the simulations performed. The Stress-Induced Leakage Current (SILC) behavior is quite similar for both conduction and valence band currents even if the amplitude of the valence band SILC is much lower. We show that a linear dependence exists between the stress-induced interface trap density and both valence and conduction band SILC. A new model of SILC is also proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 253
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 Okhonin, S.A., Pogosov, A.G., and Frantsuzov, A.A., Soy. Phys. Semicond., vol. 22, pp. 511–513, 1988.Google Scholar
2 Schuegraf, K.F. and Hu, C., Journal of Applied Physicsg, vol. 76, pp. 3695, 1994.10.1063/1.357438Google Scholar
3 Salvo, B.D., Ghibaudo, G., Panakakis, G., and Mondon, F., Microelectron. Reliability, vol. 38, pp. 1075, 1998.10.1016/S0026-2714(98)00085-7Google Scholar
4 Alers, G.B., Oates, A.S., Monroe, D., Krisch, K.S., and Weir, B.E., Appl. Phys. Lett., vol. 71, pp. 2478–2480, 1997.10.1063/1.120093Google Scholar
5 Ginovker, A.S., Gritsenko, V.A., and Sinitsa, S.P., Phys. Status Solidi A, vol. 26, pp. 489–495, 1974.10.1002/pssa.2210260211Google Scholar
6 Weinberg, Z.A., J. Appl. Phys., vol. 53, pp. 5052, 1982.10.1063/1.331336Google Scholar
7 Weinberg, Z.A. and Fischetti, M.V., J. Appl. Phys., vol. 57, pp. 443, 1985.10.1063/1.334771Google Scholar
8 Ricco, B., Gozzi, G., and Lanzoni, M., IEEE Trans. Electron Devices, vol. 45, pp. 1554–1560, 1998.10.1109/16.701488Google Scholar
9 Maserjian, J., “Tunneling in thin MOS structures,” Journal of Vacuum Science and Technology, vol. 11, pp. 996, 1974.10.1116/1.1318719Google Scholar
10 Herbert, K.J. and Irene, E.A., J. Appl. Phys., vol. 82, pp. 291–296, 1997.10.1063/1.365811Google Scholar
11 Chen, I.C., Holland, S., Young, K.K., Chang, C., and Hu, C. Appl. Phys. Lett., vol. 49, pp. 669, 1986.10.1063/1.97563Google Scholar
12 Grove, A.S. and Fitzgerald, D.J., Solid State Electron., vol. 9, pp. 783, 1966.10.1016/0038-1101(66)90118-3Google Scholar
13 Blauwe, J.D., Houdt, J.V., Wellekens, D., Groeseneken, G., and Maes, H., IEEE Trans. on Electron. Dev., vol. 45, pp. 1745–1750, 1998.10.1109/16.704374Google Scholar
14 Takagi, S., Yasuda, N., and Toriumi, A., IEEE Trans. Electron Devices, vol. 46, pp. 335–341, 1999.10.1109/16.740899Google Scholar
15 Takagi, S., Yasuda, N., and Toriumi, A., IEEE Trans. Electron Devices, vol. 46, pp. 348–354, 1999.10.1109/16.740901Google Scholar