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Tunnel Type Magnetoresistance in Electron Beam Deposited Films of Compositions (Co0.5Fe0.5)x(Al2O3)(100-x) (7 ≤ x ≤ 52)

Published online by Cambridge University Press:  10 February 2011

H.R. Khan ,
A. Ya Vovk ,
A.F. Kravets ,
O.V. Shipil  and
A.N. Pogoriliy
H.R. Khan
Affiliation:
FEM, Materials Physics Department, 73525 Schwäbisch Gmünd and Department of Physics, University of Tennessee, Knoxville TN. U.S.A
A. Ya Vovk
Affiliation:
Institute of Magnetism, 36-b Vernadskystr. 252142 Kiev, Ukraine
A.F. Kravets
Affiliation:
Institute of Magnetism, 36-b Vernadskystr. 252142 Kiev, Ukraine
O.V. Shipil
Affiliation:
Institute of Magnetism, 36-b Vernadskystr. 252142 Kiev, Ukraine
A.N. Pogoriliy
Affiliation:
Institute of Magnetism, 36-b Vernadskystr. 252142 Kiev, Ukraine
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Abstract

A series of 400 nm thick metal-insulator films of compositions (Co50Fe50)x(Al2O3(100-x) (7 ≤ x ≤ 52; x is in vol.%) are deposited on glass substrates using dual electron beam evaporation technique. The films are nanocrystalline with crystallite sizes of 1-3 nm. Resistivity of the films varies as a function of (I/T)0.5 showing a tunneling type behaviour. The films show isotropic and negative magnetoresistance (GMR). A film of composition (Co50Fe50)82.5(Al2O3)17.5 show maximum tunneling magnetoresistance (TMR) of 7.2% at room temperature and in a magnetic field of 8.2 kOe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 602: Symposium JJ – Magnetoresistive Oxides & Related Materials , 1999 , 251
Copyright
Copyright © Materials Research Society 2000

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