Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T07:26:49.107Z Has data issue: false hasContentIssue false
  • English
  • Français

Transition Temperatures in Plastic Yielding and Fracture of Semiconductors

Published online by Cambridge University Press:  15 February 2011

P. Pirouz ,
L. P. Kubin ,
J. L. Demenet ,
M. H. Hong  and
A. V. Samant
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106-7204, U.S.A.
L. P. Kubin
Affiliation:
LEM, CNRS-ONERA, B.P. 72, Av. de la Division Leclerc, 92322 Chatillon Cedex, France
J. L. Demenet
Affiliation:
LMP, CNRS, SP2MI, Bd 3, Teleport 2, BP 179, 86960 Futuroscope Cedex, France
M. H. Hong
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106-7204, U.S.A.
A. V. Samant
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106-7204, U.S.A.
Get access

Abstract

Recent experiments on deformation of semiconductors show an abrupt change in the variation of the critical resolved shear stress, τy, with temperature, T. This implies a change in the deformation mechanism at a critical temperature Tc. In the cases examined so far in our laboratory and elsewhere, this critical temperature appears to coincide approximately with the brittle-ductile transition temperature, TBDT. In this paper, the deformation experiments performed on the wide bandgap semiconductor, 4H-SiC, over a range of temperatures and strain rates are described together with the characterization of induced dislocations below and above Tc by transmission electron microscopy. Based on these results, and those of Suzuki and coworkers on other compound semiconductors, some understanding of the different mechanisms operating at low and high temperatures in tetrahedrally coordinated materials has been gained, and a new model for their brittle-ductile transition has been proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 578: Symposia A/C – Multiscale Phenomena in Materials - Experiments in Modeling , 1999 , 205
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Suzuki, T., Nishisako, T., Taru, T. and Yasutomi, T., Plastic deformation of IaP at temperatures between 77 and 500 K, Phil. Mag. Lett. 77(4), 173–180, (1998).Google Scholar
[2] Suzuki, T., Yasutomi, T., Tokuoka, T. and Yonenaga, I., Plasticity of III-V Compounds at Low Temperatures, phys. stat. sol. (a) 171, 47–52, (1999).Google Scholar
[3] Suzuki, T., Yasutomi, T., Tokuoka, T. and Yonenaga, I., Plastic deformation of GaAs at low temperatures, Phil. Mag. A 79(11), 2637–2654, (1999).Google Scholar
[4] Edagawa, K., Koizumi, H., Kamimura, Y. and Suzuki, T., Temperature Dependence of the Flow Stress of III-V Compounds. Submitted to Phil. Mag. A (1999).Google Scholar
[5] Boivin, P., Rabier, J. and Garem, H., Plastic deformation of GaAs single crystals as a function of electronic doping. I: Medium temperatures (150-650°C), Phil. Mag. A 61(4), 619–645, (1990).Google Scholar
[6] Boivin, P., Rabier, J. and Garem, H., Plastic deformation of GaAs single crystals as a function of electronic doping. II: Low temperatures (20-300°C), Phil. Mag. A 61(4), 647–672, (1990).Google Scholar
[7] Samant, A. V., Effect of Test Temperature and Strain-Rate on the Critical Resolved Shear Stress of Monocrystalline Alpha-SiC, Ph.D. thesis, Case Western Reserve University, (1999).Google Scholar
[8] Fujita, S., Maeda, K. and Hyodo, S., Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformation, Phil. Mag. A 55(2), 203–215, (1987).Google Scholar
[9] Corman, G. S., Creep of 6H Alpha;-Silicon Carbide Single Crystals, J. Am. Ceram. Soc. 75(12), 3421–3424, (1992).Google Scholar
[10] Samant, A. V. and Pirouz, P., Activation parameters for dislocation glide in α-SiC, Int. J. Refractory Metals and Hard Materials 16(4-6), 277–289, (1998).Google Scholar
[11] Samant, A. V., Zhou, W. L. and Pirouz, P., Effect of Temperature and Strain Rate on the Yield Stress of Monocrystalline 6H-SiC, phys. stat. sol. (a) 166, 155–169, (1998).Google Scholar
[12] Demenet, J. L., Hong, M. H. and Pirouz, P., Deformation tests on 4H-SiC single crystals between 900°C and 1360°C and the microstructure of the deformed samples, in “ICSCRM '99”, ed. Devaty, R. and Rohrer, G., (Trans Tech Publications Ltd., Switzerland: 1999). In press.Google Scholar
[13] Ning, X. J. and Pirouz, P., A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiC, J. Mater. Res. 11(4), 884–894, (1996).Google Scholar
[14] Maeda, K. and Fujita, S., Microscopic Mechanism of Brittle-to-Ductile Transition in Covalent Ceramics, in “Lattice Defects in Ceramics”, ed. by Takeuchi, S. and Suzuki, T., pp. 25–31, (Jap. J. Appl. Phys. - Series 2, Tokyo, 1989).Google Scholar
[15] Pirouz, P., Samant, A. V., Hong, M. H., Moulin, A. and Kubin, L. P., On temperature-dependence of deformation mechanism and the brittle-ductile transition in semiconductors, J. Mater. Res. 14(7), 2783–2793, (1999).Google Scholar
[16] Gottschalk, H., Patzer, G. and Alexander, H., Stacking Fault Energy and Ionicity of Cubic II-V Compounds, phys. stat. sol. (a) 45, 207–217, (1978).Google Scholar
[17] Takeuchi, S., Suzuki, K., Maeda, K. and Iwanaga, H., Stacking-Fault Energy of II-VI Compounds, Phil. Mag. A 50(2), 171–178, (1984).Google Scholar
[18] Takeuchi, S. and Suzuki, K., Stacking Fault Energies of Tetrahedrally Coordinated Crystals, phys. stat. sol. (a) 171, 99–103, (1999).Google Scholar
[19] Hirth, J. P. and Lothe, J., Theory of Dislocations, (McGraw-Hill, New York, 1968).Google Scholar
[20] Ning, X. J., Perez, T. and Pirouz, P., Indentation-induced dislocations and microtwins in GaSb and GaAs, Phil. Mag. A 72(4), 837–859, (1995).Google Scholar
[21] Wessel, K. and Alexander, H., On the mobility of partial dislocations in silicon, Phil. Mag. 35(6), 1523–1536, (1977).Google Scholar
[22] Alexander, H., Eppenstein, H., Gottschalk, H. and Wendler, S., TEM of dislocations under high stress in germanium and doped silicon, Journal of Microscopy 118(1), 13–21, (1980).Google Scholar
[23] Hirsch, P. B., The structure and electrical properties of dislocations in semiconductors, J. Microscopy 118(1), 3–12, (1980).Google Scholar
[24] Heggie, M. and Jones, R., Solitons and the electrical and mobility properties of dislocations in silicon, Phil. Mag. B 48(4), 365–377, (1983).Google Scholar
[25] Celli, V., Kabler, M., Ninomiya, T. and Thomson, R., Theory of Dislocation Mobility in Semiconductors, Phys. Rev. 131(1), 58–72, (1963).Google Scholar
[26] Rybin, V. V. and Orlov, A. N., Dislocation Mobility in Crystals with a High Peierls Barrier, Sov. Phys. - Solid State 11(12), 2635–3024, (1970).Google Scholar
[27] Bondarenko, I. E., Eremenko, V. G., Farber, B. Y., Nikitenko, V. I. and Yakimov, E. B., On the Real Structure of Monocrystalline Silicon near Dislocation Slip Planes, phys. stat. sol. (a) 68, 53–60, (1981).Google Scholar
[28] Kisielowski-Kemmerich, C., Vacancies and Their Complexes in the Core of Screw Dislocations: Models Which Account for ESR Investigations of Deformed Silicon, phys. stat. sol. (b) 161, 111–132, (1990).Google Scholar
[29] Alexander, H., Dislocations in Covalent Crystals, in “Dislocations in Solids”, ed. by Nabarro, F. R. N., pp. 114–234, (Elsevier Science Publishers B. BV, Amsterdam, 1986).Google Scholar
[30] Thomson, R., Physics of Fracture, in “Solid State Physics”, ed. by Ehrenreich, H. and Turnbull, D., pp. 1–129, (Academic Press, New York, 1986).Google Scholar
[31] Hirsch, P. B. and Roberts, S. G., The brittle-ductile transition in silicon, Phil. Mag. A 64(1), 55–80, (1991).Google Scholar
[32] Brochard, S., Rabier, J. and Grilhé, J., Nucleation of partial dislocations from a surface-step in semiconductors: a first approach of the mobility effect, Eur. Phys. J. - AP 2,99–105, (1998).Google Scholar