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Thermal Stability in Pd-Based Contacts to p-Type In0.53Ga0.47as Characterized by Rbs

Published online by Cambridge University Press:  15 February 2011

P. W. Leech ,
P. Ressel ,
G. K. Reeves ,
W. Zhou  and
E. Kuphal
P. W. Leech
Affiliation:
Telstra Research Laboratories, Clayton, 3168, Victoria, Australia
P. Ressel
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
G. K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, 3001, Victoria, Australia
W. Zhou
Affiliation:
Royal Melbourne Institute of Technology, 3001, Victoria, Australia
E. Kuphal
Affiliation:
Deutsche Telekom, FTZ, Am Kavalleriesand 3, D-64295 Darmstadt, Germany
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Abstract

The resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/Zn/Au/LaBd6/Au contacts to p-In0.53Ga0.47As have been investigated. Annealing of the contacts at 375–425°C yielded a minimum in specific contact resistance, p,, of 2 × 10-7 Δ cm2 for the Pd/Zn/Pd/Au contacts and 1 Δ cm2 for the Pd/Zn/Au/LaB6/Au configuration. This is the lowest reported measurement of pc for an ohmic contact to p-In0.53Ga0.47As doped to ≤1 × 1019 cm−3. In the Pd/Zn/Au/LaB6/Au scheme, the minimum in pc was the same irrespective of whether the Zn was incorporated as a structural layer or as Zn ions implanted into the interfacial Pd prior to metallization. The effect of thickness of the Zn layer on pc has been determined for the Pd/Zn/Au/LaB6/Au scheme. RBS measurements have shown that during annealing, the LaB6 layer acted as a barrier to the indiffusion of Au and to the degradation of the In0.53Ga0.47As substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 419
Copyright
Copyright © Materials Research Society 1996

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References

1. Wang, L.C., Mater. Res. Soc. Proc. 319, 93, (1994).Google Scholar
2. Bruce, R., Clarke, D. and Eicher, S., Journal of Electronic Materials, 19, 225, (1990).Google Scholar
3. Leech, P.W., Reeves, G.K. and Kibel, M.H., J.Appl.Phys., 76(8), 4713, (1994).Google Scholar
4. Ressel, P., Strusny, H., Vogel, K., Würfl, J., Wesch, W., Lenk, G., Kuphal, E., Fritzsche, D., Kräutle, H. and Mause, K., Proc. 7th Int. Conf on InP and Related Materials, May 1995, Sapporo, Japan.Google Scholar
5. Reeves, G.K. and Harrison, H.B., IEEE Electron Device Letters, EDL-3, 111, (1982).Google Scholar
6. Vandenberg, J., Temkin, H., Hamm, R. and Diguiseppe, M., Thin Solid Films, 104, 419, (1983).Google Scholar
7. Wang, L.C., Wang, X.Z., Hsu, S.N., Lau, S.S., Lin, P.S., Sands, T., Schwartz, S.A., Plumpton, D.L. and Kuech, T.F., J.Appl.Phys., 69, 4364, (1991).Google Scholar