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Theory of Electron Energy Loss Spectroscopy and its Application to Threading Edge Dislocations in GaN

Published online by Cambridge University Press:  21 March 2011

C. J. Fall ,
R. Jones ,
P. R. Briddon ,
A. T. Blumenau ,
T. Frauenheim  and
M. I. Heggie
C. J. Fall
Affiliation:
School of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom
R. Jones
Affiliation:
School of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom
P. R. Briddon
Affiliation:
Department of Physics, University of Newcastle upon Tyne, Newcastle NE1 7RU, United Kingdom
A. T. Blumenau
Affiliation:
Theoretische Physik, Universität Paderborn, D-33098 Paderborn, Germany
T. Frauenheim
Affiliation:
Theoretische Physik, Universität Paderborn, D-33098 Paderborn, Germany
M. I. Heggie
Affiliation:
CPES, University of Sussex, Falmer, Brighton BN1 9QJ, United Kingdom
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Abstract

The electronic structure of dislocations in GaN is controversial. Several experimental techniques such as carrier mobility studies and cathodoluminescence experiments have indicated that dislocations are charged while theoretical studies point to intrinsic states and/or point defect accumulation along the core as a source of electrical activity. Electron Energy Loss Spectroscopy (EELS) studies have the ability to probe the electronic structure of extended defects. Here we report rst principles calculations of the EELS spectrum applied to edge dislocations in GaN. It is found that the electrostatic potential at N atoms in the vicinity of the dislocation varies by the order of a volt and casts doubt on any simple interpretation of core loss spectroscopy. On the other hand, low loss spectroscopy leads directly to detailed information about any gap states. The low loss spectrum obtained by the theory is in good agreement with recent experimental work and indicates that threading dislocations in p-type GaN possess acceptor levels in the upper half of the gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I10.1.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

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Electronic address: [email protected]

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