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Terraced Copper Growth Deposited Onto Teflon AF1600 by The Excimer Laser Irradiation of Cu(hfac)Tmvs

Published online by Cambridge University Press:  15 February 2011

D. Popovici
Affiliation:
Groupe de recherche en physique et technologie des couches minces (GCM) and Département de génie physique, École Polytechnique, C. P. 6079, Succursale Centre-ville, Montréal, Québec, H3C3A7.
K. Piyakis
Affiliation:
Groupe de recherche en physique et technologie des couches minces (GCM) and Département de génie physique, École Polytechnique, C. P. 6079, Succursale Centre-ville, Montréal, Québec, H3C3A7.
E. Sacher
Affiliation:
Groupe de recherche en physique et technologie des couches minces (GCM) and Département de génie physique, École Polytechnique, C. P. 6079, Succursale Centre-ville, Montréal, Québec, H3C3A7.
M. Meunier
Affiliation:
Groupe de recherche en physique et technologie des couches minces (GCM) and Département de génie physique, École Polytechnique, C. P. 6079, Succursale Centre-ville, Montréal, Québec, H3C3A7.
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Abstract

The laser chemical vapour deposition (LCVD) of the organometallic precursor Cu(hfac)TMVS (hexafluoroacetylacetonate)(trimethylvinylsilane) is used to grow copper films on a Teflon AF1600 substrate. Exposure to excimer laser radiation at 248 nm results in a terraced copper growth. A simple model, based on interference effects in the Teflon and copper layers, is presented to account for this structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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