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A Tem study of GaN Grown by ELO on (0001) 6H-SiC

Published online by Cambridge University Press:  03 September 2012

P. Ruterana ,
B. Beaumont ,
P. Gibart  and
Y. Melnik
P. Ruterana*
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, Institut de la Matiére et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France
B. Beaumont
Affiliation:
Centre de Recherche sur l'Hétéroépitaxie et ses Applications, rue Bernard Grégory, Sophia Antipolis, 06560, Valbonne, France
P. Gibart
Affiliation:
Centre de Recherche sur l'Hétéroépitaxie et ses Applications, rue Bernard Grégory, Sophia Antipolis, 06560, Valbonne, France
Y. Melnik
Affiliation:
A.F. Ioffe Institute, St. Petersburg 194021, Russia
*
Author for Correspondence Tel: 22 2 31 45 26 53, Fax: 33 2 31 45 26 60 email: [email protected]
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Abstract

The misfit between GaN and 6H-SiC is 3.5% instead of 16% with sapphire, the epitaxial layers have similar densities of defects on both substrates. Moreover, the lattice mismatch between AlN and 6H-SiC is only 1%. Therefore, epitaxial layer overgrowth (ELO) of GaN on AlN/6H-SiC could be a route to further improve the quality of epitaxial layers. AlN has been grown by Halide Vapour Phase Epitaxy (HVPE) on (0001) 6H-SiC, thereafter a dielectric SiO2 mask was deposited and circular openings were made by standard photolithography and reactive ion etching. We have examined GaN layers at an early stage of coalescence in order to identify which dislocations bend and try to understand why. The analysed islands have always the same hexagonal shape, limited by {0110} facets. The a type dislocations are found to fold many times from basal to the prismatic plane, whereas when a+c dislocations bend to the basal plane, they were not seen to come back to a prismatic one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W2.5
Copyright
Copyright © Materials Research Society 1999

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Footnotes

1

present address: TDI Inc, Gaithersburg, MD 20877, USA

References

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