Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:48:27.888Z Has data issue: false hasContentIssue false
  • English
  • Français

Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide

Published online by Cambridge University Press:  10 February 2011

A. Halimaoui ,
E. Henrisey ,
C. Hernandez ,
J. Martins ,
M. Paoli ,
M. Regache ,
L. Vallier ,
D. Bensahel ,
B. Blanchard  and
D. Rouchon
...Show all authors
A. Halimaoui
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
E. Henrisey
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
C. Hernandez
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
J. Martins
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
M. Paoli
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
M. Regache
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
L. Vallier
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
D. Bensahel
Affiliation:
France Telecom, branche développement, CNET, BP98 38243 Meylan-Cedex, France
B. Blanchard
Affiliation:
CEA LETI, av. des Martyrs, BP 85X, 38054 Grenoble-Cedex 9, France
D. Rouchon
Affiliation:
CEA LETI, av. des Martyrs, BP 85X, 38054 Grenoble-Cedex 9, France
F. Martin
Affiliation:
CEA LETI, av. des Martyrs, BP 85X, 38054 Grenoble-Cedex 9, France
Get access

Abstract

Direct nitridation of the silicon substrate using gaseous NO at 550–700°C, 10 mbar is studied using physical (SIMS, TEM, XPS) and electrical characterisations. The nitrogen profile can be tailored for the fabrication of thin nitrided oxides as in the case of implanted nitrogen. Degradation of the I(V) characteristics has been evidenced when the nitrogen amount increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 159
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

2. Martin, F., Masurel, C., Bensahel, D., Tartavel, G., Blanchard, B., Deutschmann, L., 6th Workshop on Dielectrics in Microelectronics, Cork, Ireland (Nov. 1994).Google Scholar
1. Okada, Y., Tobin, P.J., Reid, K.J., Hedge, R.I., Maiti, B., Ajuria, S.A., IEEE Transactions on Electron Devices, 41,1608 (1994).Google Scholar
4. Lin, C., Chou, A.I., Kumar, K., Chowdury, P., Lee, J.C., IEDM Techn. Digest, (1996), p. 331.Google Scholar
3. Sagnes, I., Laviale, D., Regache, M., Glowacki, F., Deutschmann, L., Blanchard, B., Martin, F. Mat. Res. Soc. Symp. Proc., Vol.429, (1996), p. 251.Google Scholar
5. Soleimani, H.R., Doyle, B.S., Philipossian, A., J. Electrochemical Soc. 142, L132 (1995).Google Scholar
6. Liu, C.T., Ma, Y., Becerro, J., Nakahara, S., Jeaglesham, D., Hillenius, S., IEEE Electron Dev. Letters 18, 105 (1997).Google Scholar
7. Liu, C.T., Lloyd, E.J., Ma, Y., Du, M., Opila, R.L., Hillenius, S., IEDM Techn. Digest, (1996), p. 499.Google Scholar
8. Kamath, A., Kim, B.Y., Blass, P.M., Sun, Y.M., White, J.M., Kwong, D.L., Mat. Res. Soc. Symp. Proc., Vol.477 (1997), p. 335.Google Scholar
9. Rangelov, G., Stober, J., Eisenhut, B., Fauster, T.H., Phys. Rev. B, 44, 1954 (1991).Google Scholar
10. Glowacki, F., Froeschle, B., Deutschmann, L., Sagnes, I., Laviale, D., Bensahel, D., Halimaoui, A., Martin, F., Bauer, A.J., Mat. Res. Soc. Symp. Proc., Vol.477 (1997).Google Scholar
11. Hegde, R.I., Maiti, B., Tobin, P.J., J. Electrochemical Soc. 144, 1081 (1997).Google Scholar
12. Hussey, R.J., Hoffman, T.L., Tao, Y., Graham, M.J., J. Electrochemical Soc. 143, 221 (1996).Google Scholar
13. Han, L.K., Crowder, S., Hargrove, M., Wu, E., Lo, S.H., Guarin, F., Crabbé, E., Su, L., IEDM. Techn. Digest, (1997), p. 643.Google Scholar
14. Umeno, M., Baba, S., Kojima, T., Ohmae, N., Defect Control in Semiconductors, edited by K., Sumino, Elsevier Sci. Pub. BV (North Holland 1990), p. 273.Google Scholar
15. Kamgar, A., Wong, H.H., Liu, C.T., Rafferty, C.S., Clemens, J.T., IEDM Techn. Digest, (1997), p. 695.Google Scholar
16. Dmowski, K., Halimaoui, A., Non-Cryst, J.. Solids 216, 185 (1997).Google Scholar
17. Liu, C.T., Ghetti, A., Ma, Y., Allers, G., Chang, C.P., Cheung, K.P., Colonell, J.I., Lai, W.Y.C., Pai, C.S., Liu, R., Vaidya, H., Clemens, J. T., IEDM Techn. Digest, (1997), p. 85.Google Scholar
18. Saks, N.S, Ma, D.I, Fowler, W.B., Appl. Phys. Lett. 67, 374 (1995).Google Scholar