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Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

C. Piskoti ,
B. Mykolajenko  and
M. Vaziri
C. Piskoti
Affiliation:
The University of Michigan-Flint, Department of Physics & Engineering Science, Flint, Michigan 48502;, U.S.A.
B. Mykolajenko
Affiliation:
The University of Michigan-Flint, Department of Physics & Engineering Science, Flint, Michigan 48502;, U.S.A.
M. Vaziri
Affiliation:
The University of Michigan-Flint, Department of Physics & Engineering Science, Flint, Michigan 48502;, U.S.A.
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Abstract

To study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 727
Copyright
Copyright © Materials Research Society 1993

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References

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