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Structural Characteristics of CoGe2 Alloy Films Grown Heteroepitaxially on GaAs(100) Substrates Using the Partially Ionized Beam Deposition Technique

Published online by Cambridge University Press:  15 February 2011

K. E. Mello ,
S. P. Murarkak ,
S. L. Lee  and
T.-M. Lu
K. E. Mello
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
S. P. Murarkak
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
S. L. Lee
Affiliation:
U.S.Army Armament Research, Development, Engineering Center, Watervliet, NY, 12189
T.-M. Lu
Affiliation:
Department of Physics, Applied Physics, Astronomy
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Abstract

The Partially ionized beam (PIB) deposition technique was used to deposit CoGe2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. For the CoGe2(001)/GaAs(100) system, which leads to an Ohmic contact, a substrate temperature of 280°C and ∼1200 eV Ge+ ions are required. Reducing the ion energy or lowering the substrate temperature both produce a different orientation in the films. Films deposited at 280°C with a zero accelerating potential for the ions, and those deposited at 200°C with -1200 eV Ge+ ions result in a CoGe2(100)//GaAs(100) type orientation domination, leading to rectifying behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 565
Copyright
Copyright © Materials Research Society 1996

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