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Strain Measurements in Si/Si0.5Ge0.5 Superlattices by He Ion Channeling

Published online by Cambridge University Press:  28 February 2011

S. Mantl ,
E. Kasper  and
H. J. Jorke
S. Mantl
Affiliation:
Institut fir Festkorperforschung, KFA JUlich, Postfach 1913, D-5170 JUlich, FRG
E. Kasper
Affiliation:
Institut fir Festkorperforschung, KFA JUlich, Postfach 1913, D-5170 JUlich, FRG
H. J. Jorke
Affiliation:
AEG-Telefunken, Forschungsinstitut, D-7900 Ulm, FRG
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Abstract

He ion channeling experiments have been performed on molecular beam grown Si/SiGe superlattices to determine the strain fields. Angular yield scans provide directly the tetragonal strains in the layers. In Si/Si0.5Ge0.5 superlattices grown on (100) Si only the SiGe layers are strained. Almost equal but opposite strains in the Si and SiGe layers have been found in a Si/Si0.5Ge0.5 superlattice deposited on a 230 nm thick SiO.71Ge0.29 buffer layer. Strain symmetrization yields the minimum elastic energy and thus to the most stable structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 305
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H. and Herzog, H.J., Phys. Rev. Lett. 54 (1985) 2441 Google Scholar
[2] People, R., Bn, J.C., Lang, D.V., Sergent, A.M., Störmer, H.L., Wecht, K.W., Lynch, R.T. and Baldwin, K., Appl. Phys. Lett. 45 (1984) 1231 Google Scholar
[3] Pearsall, T.P., Bevk, J., Feldmann, L.C., Bonar, J.M. and Mannaerts, J.P. Phys. Rev. Lett. 58 (1987) 729 Google Scholar
[4] Kasper, E., Herzog, H.J., Jorke, H. and Abstreiter, G., Superlattices and Microstructures (1987) in press.Google Scholar
[5] Fiory, A.T., Feldmann, L.C., Bean, J.C. and Robinson, I.K., Mat. Res. Soc. Symp. Proc. 25 (1984) 497 Google Scholar
[6] Picraux, S.T., Chu, W.K., Allen, W.R. and Ellison, J. A., Nucl. Instr. and Meth. B15 (1986) 306 Google Scholar
[7] Mantl, S., Buchal, Ch., stritzker, BC. and Saftic, B., Nucl. Instr. and Meth. B15 (1986) 314 Google Scholar
[8] Mantl, S., Poker, D.B. and Reichelt, K., Nucl. Instr. and Meth. B19/20 (1987) 677 Google Scholar
[9] Kasper, E., App. Phys. A28 (1982) 129 Google Scholar
[10] Jorke, J., Herzog, H.J. and Kibbel, H., App. Phys. Lett. 47 (1985) 511 Google Scholar
[11] Doolittle, L.R., Niuil. Instr. and Meth. B15 (1986) 277 Google Scholar
[12] Bean, J.C., Feldmann, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K. J. Vac. Sci. Technol. A2 (1984) 436 Google Scholar
[13] Murakami, M., CRC Cirtical Reviews in Solid State and Materials Science, Vol 11 (1984) 317 Google Scholar
[14] Hull, R., Bean, J.C., Cerdeira, F., Fiory, A.T. and Gibson, J.M., Appl. Phys. Lett 48 (1986) 56 Google Scholar