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Spontaneous Change of Growth Orientation of InGaP/GaAs Superlattices in MBE

Published online by Cambridge University Press:  25 February 2011

K. Mahalingam ,
Y. Nakamura ,
N. Otsuka ,
H. Y. Lee ,
M. J. Hafich  and
G. Y. Robinson
K. Mahalingam
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
Y. Nakamura
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
H. Y. Lee
Affiliation:
Dept. of Electrical Engineering, Colorado State University, Ft. Collins, CO 80573
M. J. Hafich
Affiliation:
Dept. of Electrical Engineering, Colorado State University, Ft. Collins, CO 80573
G. Y. Robinson
Affiliation:
Dept. of Electrical Engineering, Colorado State University, Ft. Collins, CO 80573
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Abstract

The influence of growth interruption during the MBE growth of (100) In0.5Ga0.5P/GaAs superlattices is investigated by cross-sectional TEM. It is observed that for certain combinations of interruption lengths and group V fluxes, the growth orientation of the superlattice changes spontaneously from [100] to <311> direction. V-shaped grooves with {311} facets form initially in the growth plane and eventually lead to the formation of regions of {311} superlattice structures. The direction of V-shaped grooves is along the [011[ axis, which is parallel to the surface dangling bonds of the group V atoms in the unreconstructed (100) plane. The most critical stage for the spontaneous change of the growth orientation is the interruption after the growth of a GaAs layer with the P2 flux. Our observations suggest that small but stable {311} facets form at this stage and develop into well-defined {311} growth planes during the growth of the GaAs layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 537
Copyright
Copyright © Materials Research Society 1991

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References

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