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S-Passivated InP Surfaces Prepared by (NH4)2S Treatments
Published online by Cambridge University Press: 25 February 2011
Abstract
S-terminated InP(100) surfaces which are chemically clean and stable were obtained by sulfide solution treatments. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) were used to investigate the thermal and chemical stability of the surfaces. Schottky diodes based on S-passivated InP(100) wafers were used as test devices tostudy the surface electrical properties.
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- Copyright © Materials Research Society 1992