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Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor Systems

Published online by Cambridge University Press:  01 January 1993

H. Stiebig  and
M. BÖhm
H. Stiebig
Affiliation:
Center of Sensor Systems, University of Siegen, W-5900 Siegen, Germany
M. BÖhm
Affiliation:
Center of Sensor Systems, University of Siegen, W-5900 Siegen, Germany
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Abstract

Amorphous silicon based n-i-p-i-n structures may be used as color detectors. A simulation program has been developed which allows the examination of the spatial distribution of carrier concentrations, electric field and current densities under different illumination conditions. Furthermore current/voltage- and monochromatic response curves are presented. The results of the simulation point out that the defect density in the p-layer has a major influence on device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 963
Copyright
Copyright © Materials Research Society 1993

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References

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