Article contents
Silicide Technology in Deep Submicron Regime
Published online by Cambridge University Press: 10 February 2011
Abstract
Silicide technology using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi2 films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful in deep sub-quarter micron devices.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1998
References
REFERENCES
- 4
- Cited by