Silicon carbide is a semiconductor with desirable material properties, such as a wide bandgap and high thermal conductivity. It is an excellent material for constructing power switching devices operating in harsh environments where conventional semiconductors cannot adequately perform. One example of such a power device is a bipolar junction transistor (BJT). While the potential of the SiC BJT is recognized, appropriate techniques for producing devices is lacking due to its difficulty.

For example, in order to achieve a high voltage 4H-SiC BJT switch with nanosecond switching time, the device must have a low base resistance. The simulation results indicate that for an emitter width of 2.0 μm and a base width of 1.2 μm the distance between the two should be 0.4 μm or less to meet the requirement for base resistance. To produce the above-described geometries and spacing, it is desirable to construct the device in a self-aligned manner. Self-alignment in this context means that the relative spacing of features of the device, such as contacts, is automatically controlled by the processing sequence and process parameters, rather than by the careful alignment prior to exposure of a photo sensitive layer. For this purpose, we developed a novel self-aligned process for SiC BJT devices, that enables the fabrication of the design with high yield, as standard silicon self-aligned technique are not applicable.

The newly developed process starts with the deposition of the emitter contact metal, which provides the metal mask for the etching of the emitter ridges. Next, the wafer is planarized with photoresist and etched, so that only the emitter contacts are exposed. Electroless plating is then used to enlarge the contacts, and after removal of the resist, the plating provides an overhang, suitable for lift-off of the base contact metal. After the base contact metal deposition, the structure is planarized and etched, this time with a silicon dioxide layer, again exposing the plated emitter contacts and the lift-off step is the wet etching of the plated metal. The emitters are then all connected with a blanket wiring level, which also forms the base contact pad. This process is simpler and more robust than the process we developed to date. The main difference is the inclusion of a sacrificial lift-off overhang, created by electroless plating. It enables a well controlled overhang independent of steepness of the SiC ridge profile and the height of the emitter mesa. We successfully fabricated the overhang structure on 4H-SiC substrates.

In conclusion, we report the demonstration of a new self-aligned process, which provides a self-aligned emitter contact, a self-aligned base contact and eliminates the need for via holes smaller than the emitter stripe widths. We consider this new process a major improvement over existing processes to fabricate SiC BJT devices.